| Allicdata Part #: | HSMS-286E-TR1G-ND |
| Manufacturer Part#: |
HSMS-286E-TR1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Broadcom Limited |
| Short Description: | DIODE SCHOTTKY DETECT HF SOT-323 |
| More Detail: | RF Diode Schottky - 1 Pair Common Anode 4V SOT-3... |
| DataSheet: | HSMS-286E-TR1G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Diode Type: | Schottky - 1 Pair Common Anode |
| Voltage - Peak Reverse (Max): | 4V |
| Capacitance @ Vr, F: | 0.25pF @ 0V, 1MHz |
| Resistance @ If, F: | -- |
| Operating Temperature: | 150°C (TJ) |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | SOT-323 |
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The HSMS-286E-TR1G type is a miniature surface-mount Schottky diode which is designed to operate in high-speed switching circuits and rf applications. It is a high performance device designed with a very small, low-cost package and it meets all the requirements of surface-mount and reo-flow soldering processes. The HSMS-286E-TR1G offers excellent performance characteristics and has become an extremely popular choice for a wide range of applications.
The HSMS-286E-TR1G is especially suitable for use in high speed switching circuits, high-performance receivers and transmitters, automotive electronics, pad switching, and VCO designs. Its low forward voltage drop of 0.65 V and high-speed switching capabilities make it ideal for applications where a very fast switching time is required. In addition, the small size and low cost make it suitable for use in a variety of designs and applications.
The HSMS-286E-TR1G is designed to provide reliable performance and high immunity to electrical noise. It is designed to operate over a wide temperature range of -55° to +150° C and is able to withstand voltages up to 25 V. It is also designed to have high reliability, with an extremely low failure rate.
The HSMS-286E-TR1G can be used in a variety of applications, from high-speed switching circuits to radar and communications systems, as well as high power transmitters. It is also excellent for use in automotive electronics and radio-frequency (RF) applications. The low forward voltage drop and high switching speed of the HSMS-286E-TR1G make it particularly suitable for high-speed switching applications.
The HSMS-286E-TR1G has a working principle based on two electrodes and a reverse biased PN-junction. When a DC voltage is applied to the two electrodes, a reverse bias voltage is created across the PN junction. This reverse bias voltage creates a depletion region which consists of a negatively charged layer of electrons and positively charged holes, thus forming an electrical field which blocks current from flowing through the diode.
When a signal is applied to the electrodes, the depletion region of the diode is reduced, allowing current to pass through and thus turning the diode on. This operation enables the HSMS-286E-TR1G to be used as a switch to control the flow of electrical signals. It can also be used as an attenuator to reduce the amplitude of a signal, and as an amplifier to boost a signal’s amplitude.
The HSMS-286E-TR1G is a very versatile and efficient device, which is well-suited for a wide range of applications. Its small size and low forward voltage drop make it particularly suitable for high-speed switching circuits, high-performance receivers and transmitters, automotive electronics, and radio-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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HSMS-286E-TR1G Datasheet/PDF