HSMS-286E-TR1G Allicdata Electronics
Allicdata Part #:

HSMS-286E-TR1G-ND

Manufacturer Part#:

HSMS-286E-TR1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY DETECT HF SOT-323
More Detail: RF Diode Schottky - 1 Pair Common Anode 4V SOT-3...
DataSheet: HSMS-286E-TR1G datasheetHSMS-286E-TR1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky - 1 Pair Common Anode
Voltage - Peak Reverse (Max): 4V
Capacitance @ Vr, F: 0.25pF @ 0V, 1MHz
Resistance @ If, F: --
Operating Temperature: 150°C (TJ)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Description

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The HSMS-286E-TR1G type is a miniature surface-mount Schottky diode which is designed to operate in high-speed switching circuits and rf applications. It is a high performance device designed with a very small, low-cost package and it meets all the requirements of surface-mount and reo-flow soldering processes. The HSMS-286E-TR1G offers excellent performance characteristics and has become an extremely popular choice for a wide range of applications.

The HSMS-286E-TR1G is especially suitable for use in high speed switching circuits, high-performance receivers and transmitters, automotive electronics, pad switching, and VCO designs. Its low forward voltage drop of 0.65 V and high-speed switching capabilities make it ideal for applications where a very fast switching time is required. In addition, the small size and low cost make it suitable for use in a variety of designs and applications.

The HSMS-286E-TR1G is designed to provide reliable performance and high immunity to electrical noise. It is designed to operate over a wide temperature range of -55° to +150° C and is able to withstand voltages up to 25 V. It is also designed to have high reliability, with an extremely low failure rate.

The HSMS-286E-TR1G can be used in a variety of applications, from high-speed switching circuits to radar and communications systems, as well as high power transmitters. It is also excellent for use in automotive electronics and radio-frequency (RF) applications. The low forward voltage drop and high switching speed of the HSMS-286E-TR1G make it particularly suitable for high-speed switching applications.

The HSMS-286E-TR1G has a working principle based on two electrodes and a reverse biased PN-junction. When a DC voltage is applied to the two electrodes, a reverse bias voltage is created across the PN junction. This reverse bias voltage creates a depletion region which consists of a negatively charged layer of electrons and positively charged holes, thus forming an electrical field which blocks current from flowing through the diode.

When a signal is applied to the electrodes, the depletion region of the diode is reduced, allowing current to pass through and thus turning the diode on. This operation enables the HSMS-286E-TR1G to be used as a switch to control the flow of electrical signals. It can also be used as an attenuator to reduce the amplitude of a signal, and as an amplifier to boost a signal’s amplitude.

The HSMS-286E-TR1G is a very versatile and efficient device, which is well-suited for a wide range of applications. Its small size and low forward voltage drop make it particularly suitable for high-speed switching circuits, high-performance receivers and transmitters, automotive electronics, and radio-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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