
Allicdata Part #: | HSMS-286F-BLKG-ND |
Manufacturer Part#: |
HSMS-286F-BLKG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE SCHOTTKY DETECT HF SOT-323 |
More Detail: | RF Diode Schottky - 1 Pair Common Cathode 4V SOT... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Schottky - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max): | 4V |
Capacitance @ Vr, F: | 0.25pF @ 0V, 1MHz |
Resistance @ If, F: | -- |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
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The HSMS-286F-BLKG is a type of diode in the RF (radio frequency) category, widely applied in the fields of microwaves, satellite communications, and data transmission. This diode, manufactured by Hewlett Packard, is completely screened with hermetic gold-over-nickel plated terminals, with a maximum operating temperature of up to 60 degrees Celsius. It offers superior isolation, insertion loss, and power handling properties compared to other diodes available in its class.
The HSMS-286F-BLKG has two terminals, an anode (positive) and a cathode (negative), although the reverse characteristics may be used in some applications. Its working principle is based on PN junction: a layer of semiconductor material which provides an insulating barrier for two different mediums, allowing current to flow in one direction, but not in the opposite one.The flow of electrons from the anode to the cathode is caused by a potential difference between them, while the junction prevents the flow of electrons in the opposite direction.
The HSMS-286F-BLKG was specifically designed to be used in RF circuits, as it allows very low levels of voltage and current to be used to control the flow of current. It has a low insertion loss and impressive isolation characteristics, which makes it ideal for use in intermediate power applications and high power switching, such as in high-lighting and audio systems. This diode can also be used in RF amplifiers and transceivers and as a power switch in TV tuners and satellite communications.
The HSMS-286F-BLKG also features an ultra-high speed response and a wide bandwidth, making it a suitable choice for high frequency applications such as in microwaves and satellite communications. It provides superior performance in applications such as receivers, transmitters, oscillators and mobile communications. It has a maximum peak reverse current of 10.20 Amps and a maximum forward voltage of 13.2Volts, making it a suitable choice for applications requiring a high forward current.
The HSMS-286F-BLKG has proved to be reliable and efficient in every application where it has been used. Its low noise levels and superb isolation characteristics make it suitable for virtually any application, and its temperature and frequency characteristics make it a great choice for intensively demanding applications. Additionally, it enjoys a long life service and its hermetic package ensures that it is well protected against dust and moisture, making it ideal for outdoor applications.
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