
Allicdata Part #: | HSMS-286F-TR1G-ND |
Manufacturer Part#: |
HSMS-286F-TR1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE SCHOTTKY DETECT HF SOT-323 |
More Detail: | RF Diode Schottky - 1 Pair Common Cathode 4V SOT... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max): | 4V |
Capacitance @ Vr, F: | 0.25pF @ 0V, 1MHz |
Resistance @ If, F: | -- |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
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HSMS-286F-TR1G application field and working principle
Diodes are passive electronic components that are used to regulate the flow of current in a circuit. They are often used in high-frequency radio frequency (RF) circuits and have many different applications. HSMS-286F-TR1G is a type of diode that is designed specifically for RF applications.
The HSMS-286F-TR1G is a Schottky barrier diode that has a low capacitance and high speed operation. It is a surface mount device with a low profile package, making it suitable for use in miniature circuits. The device has a forward voltage of 0.6V and a typical forward current of 400mA. It is manufactured using an epitaxial silicon process, and its operating temperature range is between -65°C and +125°C. It is also RoHS-compliant and environmentally friendly.
The HSMS-286F-TR1G diode works by allowing only current to flow in one direction. When a voltage potential is applied across the device, the negative side of the voltage is attracted to the P-type region, forming a Schottky barrier. When the potential exceeds the threshold of the Schottky barrier, current then starts to flow through the device. The diode also acts as an efficient frequency filter, meaning that only signals of the desired frequency will pass through the diode.
The HSMS-286F-TR1G can be used to create efficient power lines, high-frequency switches, filter circuits, and more. It is often used in the automotive, consumer electronics, communications, and industrial R&D applications. The device\'s low capacitance, high frequency, and low forward voltage make it well suited for high speed switching. The low profile package is also useful for applications where a small form factor is desired.
In summary, the HSMS-286F-TR1G is a Schottky barrier diode designed specifically for RF applications. It has a low capacitance, high speed operation, low profile package, and low forward voltage. It is optimized for use in high-frequency switching and filtering circuits, and its small form factor is convenient for applications where space is a critical factor. The device\'s reliability and robustness make it suitable for use in the automotive, consumer electronics, communications, and industrial R&D applications.
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