HSMS-286K-TR1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Schottky - 1 Pair Isolated
Voltage - Peak Reverse (Max):	4V
Capacitance @ Vr, F:	0.25pF @ 0V, 1MHz
Resistance @ If, F:	--
Operating Temperature:	150°C (TJ)
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363
Base Part Number:	HSMS-286K

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HSMS-286K-TR1: Application Field and Working Principle

Diodes-RF provides a broad range of semiconductor solutions for high-frequency wireless applications. The HSMS-286K-TR1 is a gallium arsenide (GaAs) monolithic diode with a low-capacitance reverse-gate design, making it suitable for RF radio frequency and high-frequency applications.The HSMS-286K-TR1 is primarily used in RF circuits that can handle high frequencies and fast switching times. It is particularly well-suited for use in mobile radio and wireless applications. Some of the common applications that the HSMS-286K-TR1 is used in include wireless LAN, WBANs, GSM, and wideband LAN systems.The HSMS-286K-TR1 is a depletion-mode switching device. It regulates the flow of current from the drain to the source terminals. The depletion-mode and low capacitance of the diode eliminates false switching, making it suitable for high-frequency operation. The HSMS-286K-TR1 has a reverse leakage voltage of 5V and a junction capacitance of 0.5pF.The HSMS-286K-TR1 has been designed for a relatively low turn-on time (20ns), a low turn-off time (6ns), and a total of 12ms of on-time. The HSMS-286K-TR1 has a fast response time, making it suitable for use in high-speed applications.The HSMS-286K-TR1 is rated for up to 26V, making it suitable for a wide range of applications. It is also temperature-compensated, which means it can be used in a wide range of temperatures. Additionally, the HSMS-286K-TR1 is a cost-effective solution for high-frequency wireless applications, making it an ideal choice for designers who need a reliable and cost-effective solution.In summary, the HSMS-286K-TR1 is a gallium arsenide monolithic diode with a low-capacitance reverse-gate design that is ideal for high-frequency wireless applications. It is a depletion-mode switching device with a reverse leakage voltage of 5V, a turn-on time of 20ns, a turn-off time of 6ns, and a total of 12ms of on-time. It is also temperature-compensated and cost-effective, making it an ideal choice for designers who need a reliable and cost-effective solution.

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