HSMS-286L-TR1G Allicdata Electronics
Allicdata Part #:

HSMS-286L-TR1G-ND

Manufacturer Part#:

HSMS-286L-TR1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY DETECT HF SOT-363
More Detail: RF Diode Schottky - 3 Independent 4V SOT-363
DataSheet: HSMS-286L-TR1G datasheetHSMS-286L-TR1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky - 3 Independent
Voltage - Peak Reverse (Max): 4V
Capacitance @ Vr, F: 0.25pF @ 0V, 1MHz
Resistance @ If, F: --
Operating Temperature: 150°C (TJ)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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HSMS-286L-TR1G is a chip-like component manufactured by Avago Technologies. It is a bidirectional Schottky diode, also known as a Schottky barrier diode. Stand-alone Schottky diodes are widely used in high-frequency analog applications. However, the HSMS-286L-TR1G is designed for use in radio frequency (RF) applications, due to the fact that it is designed for high-efficiency switch or mixer operation. It is a double-ended component, with two terminals on each end. Each terminal consists of a pin and an insulated slug, or body. The slug has two separate dielectric layers, with a Schottky diode core sandwiched in between. It is designed to provide an extremely low series resistance (a few hundred micro-ohms) while switching on and off quickly, making it ideal for switching and converting RF signals. The HSMS-286L-TR1G has a wide variety of applications in the field of RF technology. It can be used to design a range of filters, amplifiers, converters, and receivers. It is particularly suitable for high-speed, low-noise, switch-mode applications. It can also be used in multi-carrier modulator and demodulator systems, where it can switch power levels between different modulation signals. The working principle of the HSMS-286L-TR1G is fairly simple. When a voltage source is connected to the two terminals, electrons will flow from the anode side to the cathode side. As the electrons move, a continuous layer of electrons builds up on the cathode side, creating a depletion region. This region prevents additional electrons from entering the area, causing the diode to become non-conductive.When the voltage source is disconnected, the depletion region will begin to dissipate and electrons will begin to flow again. This quick transition is what makes the HSMS-286L-TR1G ideal for use in RF applications, as it allows it to switch frequencies quickly and efficiently. The HSMS-286L-TR1G is a reliable device, able to handle voltages up to 150 volts and currents up to 65 milliamps. It can also operate at temperatures ranging from -40 to 125 degrees Celsius, while maintaining its low series resistance, high-frequency operation and low noise performance. In conclusion, the HSMS-286L-TR1G is an advanced diode specifically designed for radio frequency applications. Its properties, such as low series resistance, high-frequency operation, low noise performance and high voltage handling capabilities, make it ideal for designing filters, amplifiers, converters, and receivers. Its quick response time, combined with its small size, makes it an attractive option for anyone looking for efficient and reliable switch-mode operation in RF applications.

The specific data is subject to PDF, and the above content is for reference

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