HSMS-286Y-TR1G Allicdata Electronics
Allicdata Part #:

HSMS-286Y-TR1G-ND

Manufacturer Part#:

HSMS-286Y-TR1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY DETECTOR SOD-523
More Detail: RF Diode Schottky - Single 4V SOD-323
DataSheet: HSMS-286Y-TR1G datasheetHSMS-286Y-TR1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 4V
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Resistance @ If, F: --
Operating Temperature: 150°C (TJ)
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-323
Description

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A diode is a two-terminal electronic component which conducts current in one direction while blocking current in the opposite direction. RF diodes are used in a variety of different applications, such as AM/FM radio reception and transmission, microwave communications, high-frequency power supplies, direction-finding antennas, etc. One type of RF diode is the HSMS-286Y-TR1G.

HSMS-286Y-TR1G is a small-signal Schottky diode, which is a type of rectifier. The diode features ultra-high breakdown voltage, very low forward turn-on voltage and low reverse current leakage. The diode also has a very low reverse recovery time. Its package size is only 2.0 X 2.0 X 0.5mm, making it suitable for use in compact circuit designs. This diode can operate over a wide range of temperature from -55 to 150°C, making it suitable for use in hostile environments.

The primary application field of the HSMS-286Y-TR1G is wideband and ultra-wideband communications, such as cell phones, wireless networks, satellite communication links and other RF/ microwave systems that require wide bandwidths and fast switching speed. The diode\'s low forward voltage and reverse recovery time, as well as its low power consumption, make it ideal for high-frequency switching applications. The HSMS-286Y-TR1G can also be used in antennas, RF transmitters and receivers, and general circuit designs that require effortless switching between different frequencies.

The working principle of HSMS-286Y-TR1G involves the use of a Schottky barrier. This is an electrical barrier that exists between the semiconductor layer and the metal layer, which allows electricity to flow in one direction but prevents it from flowing in the opposite direction. As current passes through the diode, it creates an electrical field, which reverses the electrical charge on the electrodes and causes the diode to switch on. When the electrical field is removed, the diode switches off.

The HSMS-286Y-TR1G diode is an extremely useful and reliable device that can be used in a variety of applications. Its high voltage breakdown, low forward turn-on voltage, low reverse current leakage and robust design make it ideal for use in high-frequency circuits. Its ability to work over a wide temperature range and its small package size also make it suitable for use in hostile environments and compact circuit designs.

The specific data is subject to PDF, and the above content is for reference

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