HSMS-8209-TR1 Allicdata Electronics
Allicdata Part #:

HSMS-8209-TR1-ND

Manufacturer Part#:

HSMS-8209-TR1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY MIXR 4V SOT143
More Detail: RF Diode Schottky - Cross Over 4V 75mW SOT-143-4
DataSheet: HSMS-8209-TR1 datasheetHSMS-8209-TR1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky - Cross Over
Voltage - Peak Reverse (Max): 4V
Capacitance @ Vr, F: 0.26pF @ 0V, 1MHz
Resistance @ If, F: 14 Ohm @ 5mA, 1MHz
Power Dissipation (Max): 75mW
Operating Temperature: 150°C (TJ)
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143-4
Base Part Number: HSMS-8209
Description

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The HSMS-8209-TR1 chip is a part of the Electro-Optical and Microwaves Division\'s family of Gallium Arsenide Field Effect Transistor (GaAsFET) microwave components. This particular device is a low noise RF amplifier, specially designed for use in general RF applications. It is ideal for high-frequency operation and can provide linearity and low power consumption.

HSMS-8209-TR1s are used in the wireless communication sector, typically in the fields of radio, television and telecommunications. They are most likely to be found in radio receivers, TV receivers and satellite and cable systems. The amplifier can also be used in high-data-rate systems and acts as a buffer between receiver and antenna, increasing the signals strength. This can also be used to reduce the amount of noise generated by the antenna, thus resulting in improved signal-to-noise ratio.

The amplifier has a low noise figure of 4.00 dB, making it ideal for use in low-noise applications such as in receiver systems where noise is a major concern. The chip has a high power output of up to 10.3 W, making it useful for applications requiring higher power. Its operating frequency range extends from 8.0 to 10.75 GHz, making it suitable for a wide range of applications requiring high frequency operation.

The HSMS-8209-TR1 has a low distortion, which results in a higher signal-to-noise ratio. The device has a high linearity, allowing it to be used for digital modulation systems. Its gain can be adjusted when configured correctly, allowing the user to achieve their desired output.

The working principle of the HSMS-8209-TR1 is relatively simple. The input signal is amplified by a field effect transistor (FET) at the drain terminal. As the supplied voltage increases, the FET\'s conductivity increases, resulting in a higher gain. At the same time, the drain current is also increased, resulting in a higher power output. The chip is designed to have a very low noise figure and the gain is linear over the entire frequency range.

In conclusion, the HSMS-8209-TR1 chip is a great choice for a wide range of applications needing high-frequency operation and low noise performance. It provides a high linearity, excellent gain and power output, and is suitable for a wide range of digital modulation systems as well as for radio receivers, television receivers, and telecommunication systems. The working principle is also simple, allowing users to configure it according to their desired output.

The specific data is subject to PDF, and the above content is for reference

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