HSMS-8209-TR2G Allicdata Electronics
Allicdata Part #:

HSMS-8209-TR2G-ND

Manufacturer Part#:

HSMS-8209-TR2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY MIXER 4V SOT-143
More Detail: RF Diode Schottky - Cross Over 4V 75mW SOT-143-4
DataSheet: HSMS-8209-TR2G datasheetHSMS-8209-TR2G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky - Cross Over
Voltage - Peak Reverse (Max): 4V
Capacitance @ Vr, F: 0.26pF @ 0V, 1MHz
Resistance @ If, F: 14 Ohm @ 5mA, 1MHz
Power Dissipation (Max): 75mW
Operating Temperature: 150°C (TJ)
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143-4
Base Part Number: HSMS-8209
Description

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HSMS-8209-TR2G is a state-of-the-art RF semiconductor device designed to operate as an array of diodes for use in a variety of applications for its low voltage, low inertial, and high isolation performance. The HSMS-8209-TR2G device was developed with the aim of providing designers with a comprehensive array of diode arrays for implementation in their projects. This range of applications includes: RF signal switching, logic signal switching, RF amplification, RF signal mixing, RF signal splitting, RF signal generation, RF signal detection, and RF noise reduction.

The HSMS-8209-TR2G is constructed using a doped polysilicon substrate material, and the array of diodes is formed by employing a low thermal-impedance semiconductor material. The device utilises uniform ohmic contacts to create a reliable interconnect between the diode and the semiconductor material for optimum performance. The array of diodes is arranged in an interleaved structure along the length of the device, and this reduces the effect of thermal impedance on overall performance.

The HSMS-8209-TR2G provides a range of operability features that make it ideal for various types of applications. The device provides low voltage operation and a low inertial signal path for signal switching, and can operate at frequencies of up to 8GHz. The device has low capacitance, providing high isolation performance for signal transmissions. The device also provides high isolation performance for RF signal detection and signal splitting. The array of diodes exhibits high stability and low RF noise performance, allowing it to be used in applications requiring reliable operation.

The HSMS-8209-TR2G is a versatile solution for low voltage and low inertial applications. The high isolation performance and low noise operation make it ideal for use in RF applications where noise sensitivity is an issue. The device is ideal for RF signal switching, logic switching, RF amplification, signal mixing, signal splitting, signal detection, and noise reduction applications. The HSMS-8209-TR2G is easy to use and is available in a range of standard packages for easy integration with existing systems.

The specific data is subject to PDF, and the above content is for reference

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