
Allicdata Part #: | HT6256DC-ND |
Manufacturer Part#: |
HT6256DC |
Price: | $ 593.76 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | |
Short Description: | IC SRAM 256K PARALLEL 28CDIP |
More Detail: | SRAM Memory IC 256Kb (32K x 8) Parallel 20MHz 50ns... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 539.78400 |
Series: | HTMOS™ |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM |
Memory Size: | 256Kb (32K x 8) |
Clock Frequency: | 20MHz |
Write Cycle Time - Word, Page: | 50ns |
Access Time: | 50ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -55°C ~ 225°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | 28-CDIP (0.600", 15.24mm) |
Supplier Device Package: | 28-CDIP |
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The HT6256DC is an 8K x 8-bit single-power static RAM specifically designed for microprocessor systems. It is organized in 1K x 8 storage words, and can be enabled with a single 5V power supply. The HT6256DC has achieved a very low standby current, minimizing the power consumption of the system.
The HT6256DC is suitable for use in various memory applications such as cache memory, ROM replacement, work space, or run time stacks. It is organized in 1K x 8 storage words and can be enabled with a single 5V supply. It has a very low standby current, low power consumption, and high speed. It is suitable for use in systems with high speed processors, DSPs and microcontrollers that are reliant on low power solutions.
The HT6256DC is fabricated using a two-metal CMOS process, which is low cost, has high speed and high integration. The device also contains a built-in self-test circuitry which enables testing of the RAM under data or program compression. This feature enhances the fault coverage of the manufacturing process. The device also supports circuitry that allows additional control signals to be used for Write Enable (WE) and Output Enable (OE).
The HT6256DC is organized into 1K x 8 storage words and is enabled with only a single 5V supply. The design requires only one clock signal for both read and write operations, which makes the device a good choice for cost sensitive applications. With its low power and low sleep current capabilities, the device is well suited for battery operated applications such as PDAs and portable video games. The device has an access time of 90ns, which makes it suitable for systems with high speed processors.
The HT6256DC works by using static RAM cells for data storage. Each cell is formed by a pair of cross-point switches, consisting of a capacitor (for storing the bits) and a six-transistor configuration. Data is written to the RAM through the use of the WE signal. When WE is high, the memory will be programmed or the data will be written. When WE is low, data stored in the RAM will not be changed. Once written, the data will then be read by the OE signal. When OE is active, the data stored in the RAM will be outputted.
The HT6256DC is a high-performance static RAM that offers low power operation and high speed operation, making it suitable for cost-sensitive applications. It is organized in 1K x 8 storage words and can be enabled with a single 5V supply. Its unique features make it ideal for microprocessor systems, DSPs and other applications that require low power solutions. The HT6256DC has a very low standby current and fast access times, making it suitable for battery operated applications such as PDAs, as well as for high speed processes.
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Part Number | Manufacturer | Price | Quantity | Description |
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HT6256DC | 593.76 $ | 1000 | IC SRAM 256K PARALLEL 28C... |
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