HYB25D512800CE-5 Integrated Circuits (ICs) |
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Allicdata Part #: | 675-1009-2-ND |
Manufacturer Part#: |
HYB25D512800CE-5 |
Price: | $ 5.62 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Qimonda |
Short Description: | IC DRAM 512M PARALLEL 66TSOP II |
More Detail: | SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 200... |
DataSheet: | HYB25D512800CE-5 Datasheet/PDF |
Quantity: | 1500 |
1500 +: | $ 5.11119 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR |
Memory Size: | 512Mb (64M x 8) |
Clock Frequency: | 200MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.3 V ~ 2.7 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 66-TSOP II |
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HYB25D512800CE-5 is a type of DRAM (dynamic random-access memory) that is used to store data. It is a component of the memory module and is used to provide a high-speed memory solution for modern computers. The module is designed to work with DDR2333,DDR-II667 (Dual Data Rate), DDR-II1066 (Dual Data Rate) and DDR-I800 (Single Data Rate) interfaces. The module utilizes a 16-bit data transfer interface and is capable of providing a maximum data throughput rate of up to 2.4GB/s (1.6GB/s when DDR-I800 is used).
The HYB25D512800CE-5 utilizes a dual-channel DDR-II1066 design that provides a maximum data throughput rate of up to 4.8Gbps. The memory module also features Error Correction Code (ECC) support, which helps improve the system reliability. The module is by default equipped with a 240-pin DIMM (dual in-line memory modules) interface. The module is well suited for use in multiprocessor applications where high-speed data transfer is a necessity.
In terms of its working principle, HYB25D512800CE-5 utilizes a system of transistors and capacitors in order to store data. Two transistors and one capacitor are used to form a memory cell. This memory cell is used to store single bits of data. When a voltage is applied to the cell, it stores a binary 1, while its absence represents a binary 0. The fast switching capabilities of transistors allow data to be read, written and processed in the memory in a very short period of time.
In terms of application fields, HYB25D512800CE-5 is mainly used in modern desktops, laptops and servers, as it provides high speed data rate and good system reliability. It is also suitable for use in embedded systems, disaster recovery systems, digital signal processing and machine vision applications. The module is used in applications where high speed memory access is a requirement, as the module is capable of providing a maximum data transfer rate of up to 4.8Gbps.
The HYB25D512800CE-5 is a versatile and high speed memory module that is well suited for use in a wide range of applications. Its dual-channel design, maximum data transfer rate and error correction code support make it an ideal choice for high speed data transfer and system reliability requirements.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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HYB25D512800CE-6 | Qimonda | -- | 1500 | IC DRAM 512M PARALLEL 66T... |
HYB25D512800CE-5 | Qimonda | 5.62 $ | 1500 | IC DRAM 512M PARALLEL 66T... |
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