IFF2400P17AE4BPSA1 Allicdata Electronics
Allicdata Part #:

IFF2400P17AE4BPSA1-ND

Manufacturer Part#:

IFF2400P17AE4BPSA1

Price: $ 1.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MODULE IPM MIPAQP-4
More Detail: IGBT Module Half Bridge 1700V Module
DataSheet: IFF2400P17AE4BPSA1 datasheetIFF2400P17AE4BPSA1 Datasheet/PDF
Quantity: 3
1 +: $ 1.26000
Stock 3Can Ship Immediately
$ 1.39
Specifications
Series: --
Part Status: Active
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1700V
Vce(on) (Max) @ Vge, Ic: --
Input: --
NTC Thermistor: No
Operating Temperature: -40°C ~ 65°C (TA)
Mounting Type: --
Package / Case: Module
Supplier Device Package: Module
Description

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The IFF2400P17AE4BPSA1 module is a optimized package of a number of insulated-gate bipolar transistors (IGBTs). IGBTs are a type of transistor that combines the properties of field-effect transistors (FETs) with those of thyristors. In many ways, IGBTs are the ideal choice for many power control applications.

IGBTs have the desirable properties of FETs low gate drive power (which makes them ideal for battery operated or portable systems), fast switching speed, and good voltage control. They also are robust, rugged and often have very low switching losses. Thyristors do not require a gate signal and have no drain/source connection and are optimized for high power applications.

The IFF2400P17AE4BPSA1 module is designed for use in a variety of applications, including motor control, UPS, medical equipment, welding control, power supplies, and power control. It is a robust and highly reliable device that is well suited for use in industrial and commercial applications.

The working principle of the IFF2400P17AE4BPSA1 module is best described as a two-switch logic approach. This combines the advantages of both FET-like and thyristor-like logic. The module is made up of two transistors, one on the top and one on the bottom, connected to two independent voltage sources. When a voltage is applied to the gate of one transistor, the module will switch on and current will flow from one voltage terminal to the other. When the voltage is removed from the gate of the top transistor, the module will switch off and current will stop flowing.

The module also has a number of features that make it an attractive choice for industrial and commercial applications. It has an integrated temperature monitoring circuit, which enables it to detect any increase in temperature that could result in device failure. The module also has a number of protection features such as overvoltage, overcurrent, and short circuit protections.

The IFF2400P17AE4BPSA1 module is an ideal choice for a range of applications requiring robust, reliable and high-performance power control. It is designed to provide reliable performance in harsh conditions, and its integrated protection features enable it to maintain operational integrity even when the environment is unfavourable. The two-switch logic approach makes it fast and efficient, and its low power consumption makes it ideal for battery-powered or portable applications.

The specific data is subject to PDF, and the above content is for reference

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