IFF600B12ME4PB11BPSA1 Allicdata Electronics
Allicdata Part #:

IFF600B12ME4PB11BPSA1-ND

Manufacturer Part#:

IFF600B12ME4PB11BPSA1

Price: $ 182.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: ECONO DUAL 3 W/SHUNTS
More Detail: IGBT Module Trench Field Stop Half Bridge 1200V 60...
DataSheet: IFF600B12ME4PB11BPSA1 datasheetIFF600B12ME4PB11BPSA1 Datasheet/PDF
Quantity: 1000
1 +: $ 165.62100
10 +: $ 158.62100
Stock 1000Can Ship Immediately
$ 182.18
Specifications
Series: EconoDUAL™ 3
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 600A
Power - Max: 40W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
Current - Collector Cutoff (Max): 3mA
Input Capacitance (Cies) @ Vce: 37nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The IFF600B12ME4PB11BPSA1 is an IGBT module that is used for a number of applications. This IGBT module offers an impressive combination of high-temperature performance, low-voltage operation and high power dissipation. The IFF600B12ME4PB11BPSA1 is typically used in industrial motor and power electronics applications.

The IFF600B12ME4PB11BPSA1 is a high voltage module that is used for direct current (DC) drive applications and offers a wide range of gate drive options. The module is optimized for low frequencies, allowing for a higher gate drive current and gate voltage range. The IFF600B12ME4PB11BPSA1 also offers a wide range of gate drive waveform options, from sinusoidal to square wave.

The working principle of the IFF600B12ME4PB11BPSA1 is based on the insulated gate bipolar transistor (IGBT). The IGBT is a four-layer device and consists of an insulated gate, a base and an emitter. The IGBT works on the principle of combining the low-power loss properties of an MOSFET with the high-current capability of a bipolar transistor. When a positive voltage is applied to the gate of the IGBT, electrons are pushed away, creating a depletion layer around the gate. This creates a barrier that prevents current from flowing between the emitter and the collector. When a negative voltage is applied to the gate, current can flow freely between the emitter and the collector, creating a conducting channel.

The IFF600B12ME4PB11BPSA1 is typically used in applications such as Industrial Motor Drive, Uninterruptible Power Supply (UPS) systems, 3-Phase Motor Control, DC Motor Drive, Solar Inverters and Motor Control Units. The module is also suitable for Frequency Converters, Traction Inverters, Electronic Ballast Control and Electric Heating Controls. The IFF600B12ME4PB11BPSA1 is also suitable for applications requiring high electric current with low gate voltage.

The IFF600B12ME4PB11BPSA1 is an efficient and reliable IGBT module capable of providing high power and current. The module is designed to handle high-voltage and high-current applications while maintaining low-power losses. The module is ideal for use in automotive and industrial motor control applications as well as in power electronics systems.

The IFF600B12ME4PB11BPSA1 IGBT module offers an impressive combination of high-temperature performance, low-voltage operation and high power dissipation. The module is an excellent choice for industrial motor and power electronic applications and is capable of providing high power and currents with low gate voltage.

The specific data is subject to PDF, and the above content is for reference

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