Allicdata Part #: | IFF600B12ME4PB11BPSA1-ND |
Manufacturer Part#: |
IFF600B12ME4PB11BPSA1 |
Price: | $ 182.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | ECONO DUAL 3 W/SHUNTS |
More Detail: | IGBT Module Trench Field Stop Half Bridge 1200V 60... |
DataSheet: | IFF600B12ME4PB11BPSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 165.62100 |
10 +: | $ 158.62100 |
Series: | EconoDUAL™ 3 |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 600A |
Power - Max: | 40W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 600A |
Current - Collector Cutoff (Max): | 3mA |
Input Capacitance (Cies) @ Vce: | 37nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The IFF600B12ME4PB11BPSA1 is an IGBT module that is used for a number of applications. This IGBT module offers an impressive combination of high-temperature performance, low-voltage operation and high power dissipation. The IFF600B12ME4PB11BPSA1 is typically used in industrial motor and power electronics applications.
The IFF600B12ME4PB11BPSA1 is a high voltage module that is used for direct current (DC) drive applications and offers a wide range of gate drive options. The module is optimized for low frequencies, allowing for a higher gate drive current and gate voltage range. The IFF600B12ME4PB11BPSA1 also offers a wide range of gate drive waveform options, from sinusoidal to square wave.
The working principle of the IFF600B12ME4PB11BPSA1 is based on the insulated gate bipolar transistor (IGBT). The IGBT is a four-layer device and consists of an insulated gate, a base and an emitter. The IGBT works on the principle of combining the low-power loss properties of an MOSFET with the high-current capability of a bipolar transistor. When a positive voltage is applied to the gate of the IGBT, electrons are pushed away, creating a depletion layer around the gate. This creates a barrier that prevents current from flowing between the emitter and the collector. When a negative voltage is applied to the gate, current can flow freely between the emitter and the collector, creating a conducting channel.
The IFF600B12ME4PB11BPSA1 is typically used in applications such as Industrial Motor Drive, Uninterruptible Power Supply (UPS) systems, 3-Phase Motor Control, DC Motor Drive, Solar Inverters and Motor Control Units. The module is also suitable for Frequency Converters, Traction Inverters, Electronic Ballast Control and Electric Heating Controls. The IFF600B12ME4PB11BPSA1 is also suitable for applications requiring high electric current with low gate voltage.
The IFF600B12ME4PB11BPSA1 is an efficient and reliable IGBT module capable of providing high power and current. The module is designed to handle high-voltage and high-current applications while maintaining low-power losses. The module is ideal for use in automotive and industrial motor control applications as well as in power electronics systems.
The IFF600B12ME4PB11BPSA1 IGBT module offers an impressive combination of high-temperature performance, low-voltage operation and high power dissipation. The module is an excellent choice for industrial motor and power electronic applications and is capable of providing high power and currents with low gate voltage.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IFF600B12ME4PB11BPSA1 | Infineon Tec... | 182.18 $ | 1000 | ECONO DUAL 3 W/SHUNTSIGBT... |
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