Allicdata Part #: | IFS75B12N3E4B31BOSA1-ND |
Manufacturer Part#: |
IFS75B12N3E4B31BOSA1 |
Price: | $ 87.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT LOW PWR ECONO |
More Detail: | IGBT Module Trench Field Stop Full Bridge 1200V 15... |
DataSheet: | IFS75B12N3E4B31BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 79.60190 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Full Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 150A |
Power - Max: | 385W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 75A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 4.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Introduction
IFS75B12N3E4B31BOSA1 is a semiconductor module which belongs a special transistors-IGBTs application field. In this article, we will discuss about the application field and working principle of the IFS75B12N3E4B31BOSA1.
Application Field of IFS75B12N3E4B31BOSA1
IFS75B12N3E4B31BOSA1 is perfect for a variety of electrical and electronic applications. Its high input voltage, fast switching time and precise current control have made it one of the most sought-after modules among both hobbyists and professional engineers. Some of the most common applications include:
- DC and AC motor drives
- Inverters
- Power supplies
- Power factor correction circuits
- Solar inverters
- Lighting control systems
Working Principle of IFS75B12N3E4B31BOSA1
The IFS75B12N3E4B31BOSA1 module is based on an IGBT (Insulated Gate Bipolar Transistor), which is a two-terminal electric switch. It\'s composed of two components – the Emitter and the Collector – and it works by applying a voltage between them. In order for it to turn on, current must be supplied to the Gate pin, which controls the voltage at the Emitter-Collector terminals. When the Gate voltage exceeds the Emitter-Collector voltage, then the transistor is ‘on’ and it allows current to flow between the terminals.
The IFS75B12N3E4B31BOSA1 module is used in applications requiring precise control over the current flow. It allows the user to control the current flow with high accuracy, by adjusting the voltage at the Gate pin. Since the Gate voltage is controlled by a signal, this allows the device to be used in complex motor drive applications, such as AC and DC motor drives, that require precise current control.
The IFS75B12N3E4B31BOSA1 module is designed with a number of safety features. It is protected from multiple failures, such as over-current, over-temperature and short-circuit. It also has integrated circuit protection, which allows it to automatically switch off in the event of an overload. This makes it an ideal choice for applications which require high levels of safety and reliability.
Conclusion
The IFS75B12N3E4B31BOSA1 module belongs to the IGBTs transistors application field. Its high input voltage, fast switching time and precise current control makes it perfect for a variety of applications, including DC and AC motor drives, inverters, power supplies, power factor correction circuits, solar inverters and lighting control systems. It is designed with multiple safety features to protect it from damage, and it allows for precise current control through the adjustment of the Gate voltage.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IFS75B12N3E4B31BOSA1 | Infineon Tec... | 87.56 $ | 1000 | MOD IGBT LOW PWR ECONOIGB... |
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