IGA30N60H3XKSA1

Switching Energy:	1.17mJ
Supplier Device Package:	PG-TO220-3-31 Full Pack
Package / Case:	TO-220-3 Full Pack
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 175°C (TJ)
Test Condition:	400V, 30A, 10.5 Ohm, 15V
Td (on/off) @ 25°C:	18ns/207ns
Gate Charge:	165nC
Input Type:	Standard
Series:	TrenchStop®
Power - Max:	43W
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 30A
Current - Collector Pulsed (Icm):	120A
Current - Collector (Ic) (Max):	18A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	Trench Field Stop
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The IGA30N60H3XKSA1 is an Insulated Gate Bipolar Transistor (IGBT) which is used in a variety of applications. It is part of a family of products offered by Infineon Technologies AG and is an improvement over earlier generations of IGBS. This device is a single IGBT, as opposed to the double IGBT offerings from the same manufacturer. This article will focus on the application field and working principle of the IGA30N60H3XKSA1.

Application Field

The IGA30N60H3XKSA1 is a general-purpose IGBT that can be used for both discrete and integrated applications. This device is suitable for a variety of applications, including inverters, power converters, induction heating, uninterruptible power supplies, motor drives, and light dimming. This IGBT has improved performance over earlier generations of IGBTs. It has a higher switching frequency and a lower on-state voltage drop. Additionally, it has a reduced reverse recovery charge and a low stray inductance. These features make the IGA30N60H3XKSA1 an attractive choice for a variety of applications.

Working Principle

The IGA30N60H3XKSA1 operates by using a voltage applied to the gate and emitter terminals to the control the current flow between the collector and emitter terminals. A switch controlling the voltage applied to the gate terminal is used to control the on/off status of the IGBT. When the switch is closed, the current flow through the device is enabled and the device is said to be "on". When the switch is open, the current is blocked and the device is said to be "off". The IGA30N60H3XKSA1 is a high-voltage IGBT, meaning that it is able to operate at higher voltages than some other types of IGBTs. This device is capable of handling voltages up to 600V and it has low conduction losses. When the gate is turned on, the device is turned on and the current can flow through it. When the gate is turned off, the device is turned off and no current can flow through it.

Conclusion

In conclusion, the IGA30N60H3XKSA1 is a single, insulated gate bipolar transistor. This device is suitable for a variety of applications, including inverters, power converters, induction heating, uninterruptible power supplies, motor drives, and light dimming. It has a higher switching frequency and a lower on-state voltage drop, as well as a reduced reverse recovery charge and a low stray inductance. It\'s high voltage capabilities make it ideal for applications where higher voltages are needed. The IGA30N60H3XKSA1 operates by using a voltage applied to the gate and emitter terminals to the control the current flow between the collector and emitter terminals.

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