IGB50N65H5ATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | IGB50N65H5ATMA1TR-ND |
Manufacturer Part#: |
IGB50N65H5ATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT PRODUCTS |
More Detail: | IGBT |
DataSheet: | IGB50N65H5ATMA1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Series: | * |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
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IGBTs (Insulated Gate Bipolar Transistors) is a type of transistor which combines the best of two transistor types: the bipolar junction transistor and the metal oxide semiconductor field effect transistor (MOSFET). The IGBT is formed by connecting the source, gate, and drain to three terminals, just like any other MOSFET can be. It features an insulated gate that allows for electric current to be carried across it, providing nearly no resistance — even at very high voltages.When it comes to the IGBT you’re interested in, the IGB50N65H5ATMA1, it is a single transistor that is optimized to handle large current applications. It has a higher switching speed than most IGBTs, allowing for high frequencies to be reached with ease. Additionally, it features a higher breakdown voltage than other IGBTs, allowing for secure operation in more extreme environments.An important feature of the IGB50N65H5ATMA1 is its very low on-state voltage drop, meaning that the voltage delivered by the device is near the same voltage as what’s put in. This is a unique feature of this IGBT, as most others lose around one or two volts in the process.In terms of application fields, this IGBT is best suited for use in high power inverters, motor drives and other applications where higher current is needed in lower voltages, such as electric vehicles or large factories. It is also used in welding applications, as the high currents can be easily handled.The IGB50N65H5ATMA1 works on the same principle as any other transistor — the movement of electrons through the substrate of the transistor determines what type of current and voltage can be passed through it. In this IGBT, the electrons flow from the source to the drain through the gate when it is switched on. This allows for current to flow from the source to the drain with relative ease, allowing for higher voltages to be transmitted.The IGB50N65H5ATMA1 is a great addition to any power application field, as it allows for high power and current to be transmitted in small spaces without the fear of damage to the system. The large current and high frequencies that it can support are great, and the low voltage drop allows for more efficient power transmission.
The specific data is subject to PDF, and the above content is for reference
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