IGC36T120T8LX1SA1 Discrete Semiconductor Products

Series:	TrenchStop™
Part Status:	Active
Lead Free Status / RoHS Status:	--
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector Pulsed (Icm):	105A
Vce(on) (Max) @ Vge, Ic:	2.07V @ 15V, 35A
Switching Energy:	--
Input Type:	Standard
Td (on/off) @ 25°C:	--
Test Condition:	--
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	Die
Supplier Device Package:	Die

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IGC36T120T8LX1SA1 Application Field and Working Principle

The IGC36T120T8LX1SA1 is a type of single Insulated Gate Bipolar Transistors (IGBTs). These transistors are commonly used in different types of industries, such as building lighting control, renewable energy sector, and electric power systems. IGBTs are also used in consumer electronics like flat screen TVs and high-end audio equipment, among others.

What is an IGBT?

An IGBT is a power semiconductor device, composed of two transistors. It combines current-controlled input signals with the fast switching capabilities of a bipolar junction transistor (BJT). There are two main types of IGBTs, namely the MOS-controlled thyristor (MCT) and the junction gate field-effect transistor (JFET).

Function of an IGBT

IGBTs can be used for a number of applications, including power conversion and control, smart motor control, and starter/generator systems. An IGBT can be used to amplify current, voltage, or power in order to achieve specific goals like increasing efficiency, reducing power consumption, or achieving higher switching speeds.

Working Principle of an IGBT

The IGBT works on the principle of voltage-controlled current switching. An IGBT is in essence a combination of two semiconductor devices: a bipolar junction transistor (BJT) and a metal oxide semiconductor field effect transistors (MOSFETs). To switch on or off, an IGBT uses an electrical charge to create a small gate voltage which in turn switches on or off the conduction of the current.

Advantages of IGBTs over BJTs and MOSFETs

The IGBT has several advantages over its BJT and MOSFET counterparts. One advantage of the IGBT is its high speed switching capabilities. Another big benefit is its low tail current; the current that is left in the switch after a voltage has been applied. IGBTs also have good thermal stability, meaning that its performance remains consistent even after repeated switching cycles. Finally, it’s capable of both AC and DC switching, making it much more versatile than a BJT or MOSFET.

Conclusion

The IGC36T120T8LX1SA1 is a single Insulated Gate Bipolar Transistor (IGBT) commonly used in industries like the building lighting control, renewable energy sector, and electric power systems. It works on the principle of voltage-controlled current switching, and has many advantages over its BJT and MOSFET counterparts, such as its high speed switching capabilities and its low tail current, as well as its thermal stability and versatility in switching both AC and DC.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description