IGC50T120T8RQX1SA1 Allicdata Electronics
Allicdata Part #:

IGC50T120T8RQX1SA1-ND

Manufacturer Part#:

IGC50T120T8RQX1SA1

Price: $ 7.48
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 50A DIE
More Detail: IGBT Trench Field Stop 1200V Surface Mount Die
DataSheet: IGC50T120T8RQX1SA1 datasheetIGC50T120T8RQX1SA1 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 6.79770
Stock 1000Can Ship Immediately
$ 7.48
Specifications
Series: --
Part Status: Active
Lead Free Status / RoHS Status: --
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 50A
Switching Energy: --
Input Type: Standard
Td (on/off) @ 25°C: --
Test Condition: --
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

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The IgC50T120T8RQX1SA1 is a Single IGBT (insulated gate bipolar transistor) belonging to the C Series of IGBTs. It is an ideal choice for anyone looking for an efficient transistor with a reliable performance under varying conditions. Additionally, the package design of the IgC50T120T8RQX1SA1 makes it suitable for a wide range of applications while its high speed switching capability ensures a reliable operation.

In terms of its application field, the IgC50T120T8RQX1SA1 is mainly used in applications that require low current and high voltage. It is commonly used in automotive, telecom and industrial applications such as power converters, DC-DC/AC converters, motor control, and solar inverters. The package of the transistor is designed for optimal performance when used in harsh environment applications, so it is also suitable for outdoor applications such as outdoor lighting.

As for its working principle, the IgC50T120T8RQX1SA1 is based on the well-known insulated gate bipolar transistor. It is a four-terminal device that consists of two layers of MOS-insulated channels. First, the device has a positive control electrode (gate). When a positive voltage is applied to the gate, electrons flow from a source (low potential) to a drain (high potential). As a result, a current begins to flow between the source and the drain.

On the other hand, when a negative voltage is applied to the gate, the opposite process occurs -- electrons flow from the drain to the source, stopping the current flow between the source and the drain. Thus, by controlling the voltage applied to the gate, the current flow between the source and the drain can be controlled.

Overall, the IgC50T120T8RQX1SA1 is an excellent choice for any application requiring reliable performance and low current under high voltage conditions. Its fast switching capabilities make it suitable for a wide variety of applications, ranging from automotive and industrial applications to power converters and solar inverters. Additionally, its package design ensures that it can be used in harsh environment applications, making it the ideal solution for anyone looking for an efficient and reliable transistor.

The specific data is subject to PDF, and the above content is for reference

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