IGC99T120T8RLX1SA3 Discrete Semiconductor Products |
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| Allicdata Part #: | IGC99T120T8RLX1SA3-ND |
| Manufacturer Part#: |
IGC99T120T8RLX1SA3 |
| Price: | $ 12.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT 1200V 100A DIE |
| More Detail: | IGBT Trench Field Stop 1200V Surface Mount Die |
| DataSheet: |  IGC99T120T8RLX1SA3 Datasheet/PDF |
| Quantity: | 1000 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| 1 +: | $ 10.96200 |
| Series: | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| IGBT Type: | Trench Field Stop |
| Moisture Sensitivity Level (MSL): | -- |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Current - Collector Pulsed (Icm): | 300A |
| Vce(on) (Max) @ Vge, Ic: | 1.97V @ 15V, 100A |
| Switching Energy: | -- |
| Input Type: | Standard |
| Td (on/off) @ 25°C: | -- |
| Test Condition: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | Die |
| Supplier Device Package: | Die |
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.IGC99T120T8RLX1SA3 is a type of Insulated Gate Bipolar Transistors (IGBT), which belongs to the Single family. In general, IGBTs are components composed of two portions: a gate-controlled bipolar junction transistor (BJT) and an isolated gate FET, enabling the electric signal flow between the two components to be controlled by electric gate signals.
The purpose of the IGBT device is to provide high levels of efficiency, reliability, and performance that exceeds that of standard bipolar transistors. As a result, IGBTs are commonly used in various electrical engineering applications. This specific IGBT device is designed to operate with a VCE of 1200V, with a current rating of 8A. It has a maximum junction temperature of 150°C, with a power dissipation of up to 600W.
The primary application field of the IGC99T120T8RLX1SA3 is in industrial motor drives, uninterruptive power supplies, and solar conversion systems. In motor drives, IGBT devices are used to convert an electric signal into a corresponding electric current for driving the motor. The IGC99T120T8RLX1SA3 can also be employed in uninterruptive power supplies, providing a highly efficient way to switch from a mains power supply to a backup supply. This particular IGBT also has applications in solar conversion systems, allowing for a smooth control of the power within the system.
The working principle of IGBT devices is relatively straightforward, relying on the principle of controlling electric current through the manipulation of gate signals. In the case of the IGC99T120T8RLX1SA3, the device consists of two components: an N-channel MOSFET and an N-channel BJT. When a voltage is applied on the gate of each component, the electron flow between them will be determined according to the polarity of the voltage. In this way, electric current between the two components can be precisely regulated, making IGBT devices ideal for applications that require precise control of electric current.
In conclusion, IGC99T120T8RLX1SA3 is a type of Insulated Gate Bipolar Transistor that belongs to the Single family. It is primarily used in industrial motor drives, uninterruptive power supplies and solar conversion systems. The working principle of this particular IGBT device is based on the manipulation of gate signals, allowing for precise control of electric current between the two components.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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| IGC99T120T8RLX1SA3 | Infineon Tec... | 12.06 $ | 1000 | IGBT 1200V 100A DIEIGBT T... |
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