IGP10N60TXKSA1 Allicdata Electronics
Allicdata Part #:

IGP10N60TXKSA1-ND

Manufacturer Part#:

IGP10N60TXKSA1

Price: $ 0.64
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 20A 110W TO220-3
More Detail: IGBT NPT, Trench Field Stop 600V 20A 110W Through ...
DataSheet: IGP10N60TXKSA1 datasheetIGP10N60TXKSA1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
500 +: $ 0.58322
Stock 1000Can Ship Immediately
$ 0.64
Specifications
Power - Max: 110W
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Test Condition: 400V, 10A, 23 Ohm, 15V
Td (on/off) @ 25°C: 12ns/215ns
Gate Charge: 62nC
Input Type: Standard
Switching Energy: 430µJ
Series: TrenchStop®
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Current - Collector Pulsed (Icm): 30A
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: NPT, Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IGP10N60TXKSA1 is a high-performance insulated-gate bipolar transistor (IGBT) module. It is designed to be used in medium- to high-voltage power electronic applications, such as in motor drives, renewable energy systems and uninterruptible power supplies. With an operating voltage range of 600-1000V, this IGBT module provides superior efficiency and reliability, as well as low power dissipation during operation. In addition, the IGP10N60TXKSA1 has a low gate charge and can support fast switching applications.

This IGBT module is based on the non-punch-through (NPT) technology. It features an easy-to-drive gate, high current rating and low output capacitance. It also offers a variety of protective functions, including short-circuit protection, thermal shutdown and over-voltage protection. Furthermore, the IGP10N60TXKSA1 is suitable for use in applications where high switching speed is needed, such as in motor drives and Uninterruptible Power Supplies (UPSs).

The working principle behind the IGP10N60TXKSA1 involves the use of an insulated gate field-effect transistor (IGFET) and a diode junction field-effect transistor (DJFET). The IGFET acts as a switch, allowing current to flow through when it is triggered. The DJFET detects the current flowing in the IGBT and regulates it, preventing the voltage from dropping too low. Together, the two components work together to control the flow of the electrons, ensuring the power supply is protected.

The main application field of the IGP10N60TXKSA1 is medium- to high-voltage power electronic applications. It can be used in motor drives, renewable energy systems, uninterruptible power supplies, industrial applications and lighting systems. With its low power dissipation, high current rating and fast switching capabilities, the IGP10N60TXKSA1 is a reliable and powerful component for a variety of power electronic systems.

In conclusion, the IGP10N60TXKSA1 is an IGBT module based on the NPT technology. This component is designed for use in medium- to high-voltage power electronic applications, such as motor drives and UPSs. It features low power dissipation, a low gate charge, high current rating and fast switching capabilities. Furthermore, the IGP10N60TXKSA1 also provides a variety of protective functions, ensuring the power supply remains protected. As such, the IGP10N60TXKSA1 is an ideal choice for a variety of power electronic systems.

The specific data is subject to PDF, and the above content is for reference

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