IGP40N65F5XKSA1 Allicdata Electronics

IGP40N65F5XKSA1 Discrete Semiconductor Products

Allicdata Part #:

IGP40N65F5XKSA1-ND

Manufacturer Part#:

IGP40N65F5XKSA1

Price: $ 2.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 650V 74A 255W PG-TO220-3
More Detail: IGBT 650V 74A 255W Through Hole PG-TO-220-3
DataSheet: IGP40N65F5XKSA1 datasheetIGP40N65F5XKSA1 Datasheet/PDF
Quantity: 485
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 1.91520
10 +: $ 1.72242
100 +: $ 1.38436
500 +: $ 1.13737
1000 +: $ 0.94239
Stock 485Can Ship Immediately
$ 2.11
Specifications
Power - Max: 255W
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Test Condition: 400V, 20A, 15 Ohm, 15V
Td (on/off) @ 25°C: 19ns/160ns
Gate Charge: 95nC
Input Type: Standard
Switching Energy: 360µJ (on), 100µJ (off)
Series: TrenchStop®
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 74A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IGP40N65F5XKSA1 is a type of IGBT, which stands for Isolated Gate Bipolar Transistor. This is a type of transistor used in electronics circuits and is increasingly being used in power electronics, mainly because of its low on-state voltage, fast switching times and low losses. IGP40N65F5XKSA1 has a maximum current of 250 A, a collector-emitter breakdown voltage of 650 V, an operating frequency of 250 kHz and a maximum gate-emitter voltage of 20 V.

The primary application of IGP40N65F5XKSA1 is in industrial motor control, as it is capable of providing high power efficiency and high speed switching, making it ideal for controlling high power devices. It has been used in applications such as motor drives, welding and power supplies, as it can switch a high current rapidly and with very little loss. IGP40N65F5XKSA1 can be used in high power DC/AC inverters, which are often used in electric vehicles and renewable energy systems due to their efficiency and reliability.

The working principle of IGP40N65F5XKSA1 is based on how a bipolar junction transistor works, which is the simplest type of transistor. Bipolar junction transistors are made up of three terminals; the base, the collector, and the emitter. When a voltage is applied to the base of the transistor, it will turn on and allow current to flow from the emitter to the collector. The current can be controlled by adjusting the base voltage, allowing the transistor to act as a switch.

IGP40N65F5XKSA1 is a more advanced type of transistor, known as an isolated gate bipolar transistor. This type of transistor has an extra gate terminal, which is insulated from the other terminals. When a voltage is applied to the gate, the transistor turns on and allows current to flow from the emitter to the collector, just like a bipolar junction transistor. The advantage of this configuration is that it allows for more precise control of the current flow. This is why IGP40N65F5XKSA1 is so popular for applications such as motor control, where a high degree of control is needed.

In summary, IGP40N65F5XKSA1 is a type of isolated gate bipolar transistor, which is primarily used for industrial motor control applications. It has a high current and fast switching times, making it ideal for controlling high power devices. Additionally, IGP40N65F5XKSA1 has an insulated gate terminal, allowing for greater control of the current flow. Lastly, IGP40N65F5XKSA1 is increasingly being used in DC/AC inverters, as it is capable of providing high efficiency and reliability.

The specific data is subject to PDF, and the above content is for reference

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