Allicdata Part #: | IGP50N60TXKSA1-ND |
Manufacturer Part#: |
IGP50N60TXKSA1 |
Price: | $ 1.91 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 100A 333W TO220-3 |
More Detail: | IGBT Trench Field Stop 600V 100A 333W Through Hole... |
DataSheet: | IGP50N60TXKSA1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
500 +: | $ 1.72949 |
Power - Max: | 333W |
Supplier Device Package: | PG-TO220-3 |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Test Condition: | 400V, 50A, 7 Ohm, 15V |
Td (on/off) @ 25°C: | 26ns/299ns |
Gate Charge: | 310nC |
Input Type: | Standard |
Switching Energy: | 2.6mJ |
Series: | TrenchStop® |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 50A |
Current - Collector Pulsed (Icm): | 150A |
Current - Collector (Ic) (Max): | 100A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The IGP50N60TXKSA1 is a type of transistor commonly referred to as an Insulated-Gate Bipolar Transistor (IGBT). This type of semiconductor device is mainly used in power electronics where it is able to switch large currents more quickly and efficiently than traditional transistors. This transistor has an on-state voltage drop (Vce(sat)) of 2.5 V, a collector-emitter saturation voltage (Vcesat) of 1.8 V and a gate-emitter threshold voltage of -1.5 V.
In simple terms, the IGP50N60TXKSA1 is a switch that operates similar to a conventional transistor but with greater efficiency. An IGBT is composed of two main parts: an emitter, which is a semiconductor layer that provides negative electrical current, and a collector, which is also a semiconductor layer that provides positive electrical current. When a voltage is applied to the gate, the electrons start to flow, allowing current to pass through the emitter region. This in turn causes a voltage drop across the device, and the current-conducting path is completed. Since the current flows in the opposite direction to the gate voltage, current can be switched on or off with greater efficiency than a conventional transistor.
IGP50N60TXKSA1 is well suited for motor control and power conversion applications, in which efficiency and power savings are key. It is also ideal for use in high-frequency switch mode power supplies and electric vehicles. This IGBT features the latest generation of high speed, low voltage, low switching loss technology that improves efficiency and power density. It also has a rated voltage of 600 volts, a current rating of 50 amps, and offers high thermal resistance.
Due to its high efficiency, low voltage, and low switching loss, the IGP50N60TXKSA1 is an excellent choice for all types of applications. The device has become increasingly popular due to its cost-effectiveness, reliability, and performance. It is also an ideal choice for applications where space and efficiency are critical. With its compact form, the IGP50N60TXKSA1 can fit into a variety of spaces, making it perfect for many different applications.
Overall, the IGP50N60TXKSA1 is a reliable and energy efficient single IGBT. It is suitable for motor control and power conversion applications, as well as for high-frequency switch mode power supplies and electric vehicles. It is robust, efficient, and inexpensive, making it an excellent choice for applications where space and efficiency are paramount. With its compact form, the IGP50N60TXKSA1 is easily integrated into existing designs, making it a great choice for designers looking for a reliable and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IGP50N60TXKSA1 | Infineon Tec... | 1.91 $ | 1000 | IGBT 600V 100A 333W TO220... |
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