IGU04N60TAKMA1 Discrete Semiconductor Products |
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Allicdata Part #: | IGU04N60TAKMA1-ND |
Manufacturer Part#: |
IGU04N60TAKMA1 |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT TRENCH 600V 8A TO251-3 |
More Detail: | IGBT Trench 600V 8A 42W Through Hole PG-TO251-3 |
DataSheet: | IGU04N60TAKMA1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1500 +: | $ 0.37576 |
Power - Max: | 42W |
Supplier Device Package: | PG-TO251-3 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Test Condition: | 400V, 4A, 47 Ohm, 15V |
Td (on/off) @ 25°C: | 14ns/164ns |
Gate Charge: | 27nC |
Input Type: | Standard |
Switching Energy: | 61µJ (on), 84µJ (off) |
Series: | TrenchStop™ |
Vce(on) (Max) @ Vge, Ic: | 2.05V @ 15V, 4A |
Current - Collector Pulsed (Icm): | 12A |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGU04N60TAKMA1 is a transistor IGBT (Insulated-Gate Bipolar Transistor) from STMicroelectronics, a type of semi-conductor which is based on MOSFET technology and combines the characteristics of a bipolar junction transistor with those of an MOSFET. An IGBT, in comparison to a MOSFET, can provide a greater range of gate voltages and switching speeds, enabling the device to perform a wide variety of tasks. The IGU04N60TAKMA1 is specifically designed for use in high frequency DC-to-AC inverters.
The IGU04N60TAKMA1 is comprised of two main components – the collector and the emitter. The collector is the large terminal of the device and is connected to the ground, while the emitter is the small terminal and is drawn to a positive voltage. When a voltage difference is applied between the collector and emitter terminals, a current flows through the device. This, in turn, activates a bistable internal switch which causes the IGBT to conduct current, or turn off and stop conducting. As a result, the output of the IGU04N60TAKMA1 can be quickly and easily switched, providing precise control and a high energy efficiency.
This makes the IGU04N60TAKMA1 ideal for applications where precise control of the output power is required, such as in DC-AC inverters, power supplies and motor control systems. In such applications, the high switching speed and low power losses of the IGBT ensure a high efficiency for the device when operating in switching mode. Additionally, the IGU04N60TAKMA1 features a wide operational range with breakdown voltages of up to 600V and a continuous current rating of up to 4A.
The IGU04N60TAKMA1 also features a high switching speed, with a maximum turnover frequency of 10KHz and a minimum switch-on time of 30ns. This makes it well-suited to high frequency applications which require fast switching times, such as in motor drives and power supplies. Furthermore, the device has a low static dissipation of 0.07W at 25°C and a reverse blocking voltage of up to 600V, allowing it to operate safely in a variety of conditions.
Overall, the IGU04N60TAKMA1 is an ideal choice for applications which require precise control of output power and high switching speeds, such as in motor drives, DC-to-AC inverters and power supplies. The device features a wide operational range, high switching speed, low static dissipation and a reverse blocking voltage of up to 600V which make it suitable for operation in a variety of conditions.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IGU04N60TAKMA1 | Infineon Tec... | 0.41 $ | 1000 | IGBT TRENCH 600V 8A TO251... |
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