Allicdata Part #: | IGW08T120FKSA1-ND |
Manufacturer Part#: |
IGW08T120FKSA1 |
Price: | $ 1.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 16A 70W TO247-3 |
More Detail: | IGBT NPT, Trench Field Stop 1200V 16A 70W Through ... |
DataSheet: | IGW08T120FKSA1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
240 +: | $ 1.17524 |
Power - Max: | 70W |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Test Condition: | 600V, 8A, 81 Ohm, 15V |
Td (on/off) @ 25°C: | 40ns/450ns |
Gate Charge: | 53nC |
Input Type: | Standard |
Switching Energy: | 1.37mJ |
Series: | TrenchStop® |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 8A |
Current - Collector Pulsed (Icm): | 24A |
Current - Collector (Ic) (Max): | 16A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | NPT, Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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Introduction
IGW08T120FKSA1 is an advanced IGBT (Insulated Gate Bipolar Transistor) module commonly found in industry applications. This single-switch IGBT module is designed with an integrated antiparallel diode and supports full chip coverage. This IGBT has a high thermal cycling capability, low parasitic losses, and excellent dv/dt immunity, making it the ideal choice for a wide variety of industrial applications. This article explains the application field and working principle of the IGW08T120FKSA1.
Application Field
The IGW08T120FKSA1 module is ideal for a wide range of industrial applications due to its excellent thermal cycling capability and low parasitic losses. It is suitable for use in high-efficiency switching, motor control, and inverter systems. It is also used in traction motor control systems, renewable energy systems, and other high power applications which require efficient switching operations. Additionally, due to its high temperature tolerance and dv/dt immunity, it can be used in a wide variety of temperature and voltage environments.
Working Principle
The IGW08T120FKSA1 module is a zero-voltage switching (ZVS) device which offers low conduction losses and zero-current switching. This module utilizes an insulated gate bipolar transistor (IGBT) which works by allowing current to flow through two layers of semiconductor material. This two-layer structure results in two distinct states, the upper layer is referred to as the "conducting" state and the lower layer is referred to as the "non-conducting" state. When current is passed through the device, the device switches between the two states in a controlled manner to provide the desired electrical output. The IGW08T120FKSA1 is also equipped with an antiparallel diode which helps to protect against damage due to short circuit events.
Conclusion
The IGW08T120FKSA1 module is a highly advanced IGBT module designed for use in industrial applications. It boasts low parasitic losses, a high thermal cycling capability, and excellent dv/dt immunity, making it ideal for a variety of applications. Additionally, it utilizes a zero-voltage switching method and is equipped with an antiparallel diode for protection against short circuit events. This module is highly reliable and provides outstanding performance in a range of temperature and voltage environments in high-efficiency switching, motor control and inverter systems.
The specific data is subject to PDF, and the above content is for reference
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