Allicdata Part #: | IGZ75N65H5XKSA1-ND |
Manufacturer Part#: |
IGZ75N65H5XKSA1 |
Price: | $ 2.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 650V 75A SGL TO-247-4 |
More Detail: | IGBT Trench 650V 119A 395W Through Hole PG-TO247-4 |
DataSheet: | IGZ75N65H5XKSA1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
240 +: | $ 2.43732 |
Power - Max: | 395W |
Supplier Device Package: | PG-TO247-4 |
Package / Case: | TO-247-4 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Test Condition: | 400V, 37.5A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 26ns/347ns |
Gate Charge: | 166nC |
Input Type: | Standard |
Switching Energy: | 680µJ (on), 430µJ (off) |
Series: | TrenchStop™ 5 |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 75A |
Current - Collector Pulsed (Icm): | 300A |
Current - Collector (Ic) (Max): | 119A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | Trench |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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IGZ75N65H5XKSA1 is one of the types of power semiconductor modules from the transistor family in the Integrated Gate Bipolar Transistor (IGBT) family. It\'s a single type IGBT that comes with an integrated Super Junction Field Stop Technology, SJ-FST. This technology can help reduce the on-state voltage drop, meaning, it can effectively reduce conduction losses and increase the module\'s electrical efficiency.
IGZ75N65H5XKSA1 also has a low switching loss due to having high speed switching capability. This IGBT can be used in a wide range of applications, such as motor control, switching power supply, power inverters, UPS, welding machines, automotive systems, and photovoltaic energy systems.
The working principle behind this type of IGBT is that when an external gate voltage is applied, a current will flow through the channel, allowing the collector and emitter to be connected. Since it\'s a type of transistor, it can be used for both on and off switching purposes. When the voltage applied to the gate is lowered, or when the gate is disconnected from the power source, the current will no longer flow and the Collector-Emitter junction will be disconnected, thus turning the IGBT off.
The cryogenic performance of the IGBTs modules has been found incredibly great and the gate charge features impressive properties. The on-state voltage of the IGBTs is extremely low, meaning that the conduction losses and thermal losses are minimized as much as possible, making it highly efficient and cost-effective. And due to these features, the IGZ75N65H5XKSA1 is an ideal device for dealing with power conversion problems in many industries.
Since its modules are highly reliable, this IGBT is used in various large power system systems and is especially appropriate for the heavy-duty industrial applications. In terms of the performance of the module\'s conduction characteristics, it offers comparatively low turn-on and turn-off times, resulting in improved efficiency and performance.
In conclusion, the IGZ75N65H5XKSA1 is an excellent choice for a wide range of applications. The integrated Super Junction Field Stop Technology allows for reduced on-state voltage drop, and Since its switch-on and switch-off times are much lower than other types of IGBTs, it results in increased efficiency and better performance. Overall, this device is highly reliable, cost-effective and effective in providing efficient power conversion.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IGZ75N65H5XKSA1 | Infineon Tec... | 2.68 $ | 1000 | IGBT 650V 75A SGL TO-247-... |
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