Allicdata Part #: | IHW50N65R5XKSA1-ND |
Manufacturer Part#: |
IHW50N65R5XKSA1 |
Price: | $ 3.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 650V 80A 282W TO247 |
More Detail: | IGBT 650V 80A 282W Through Hole PG-TO247-3 |
DataSheet: | IHW50N65R5XKSA1 Datasheet/PDF |
Quantity: | 240 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 2.98620 |
10 +: | $ 2.67939 |
100 +: | $ 2.19530 |
500 +: | $ 1.86885 |
1000 +: | $ 1.57613 |
Series: | TrenchStop® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 80A |
Current - Collector Pulsed (Icm): | 150A |
Vce(on) (Max) @ Vge, Ic: | 1.7V @ 15V, 50A |
Power - Max: | 282W |
Switching Energy: | 740µJ (on), 180µJ (off) |
Input Type: | Standard |
Gate Charge: | 230nC |
Td (on/off) @ 25°C: | 26ns/220ns |
Test Condition: | 400V, 25A, 8 Ohm, 15V |
Reverse Recovery Time (trr): | 95ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IHW50N65R5XKSA1 is a monolithic, high power device in a 6.5 millimeter package designed specifically to provide reliable, trouble-free service in high-performance systems. It is also an insulated gate bipolar transistor, commonly referred to as an IGBT, which is capable of switching high currents up to 50A, and high voltages up to 1200V. This device offers superior performance characteristics that make it a popular choice for many power applications, such as motor drives, power supplies, and solar inverters.
In terms of applications, the IHW50N65R5XKSA1 can be found in AC and DC voltages such as renewable energy power inverters, solar inverters, automotive, and HVAC systems. Its integration factor makes it the product of choice for many applications, especially when space is limited. By exploiting the advantages of both bipolar and MOSFET technologies, it has been developed to increase the efficiency and reliability of a variety of different systems.
In terms of its working principle, the IHW50N65R5XKSA1 is comprised of two MOSFETs, each attached to the gate of a different IGBT. When a positive voltage is applied to the gate of one of the IGBTs, a current is conducted through the MOSFET into the collector of the IGBT. This current is then amplified between the collector and the emitter of the IGBT and then conducted out to the drain of the other MOSFET. This is the basic principle of an IGBT switching circuit.
The IHW50N65R5XKSA1 is also equipped with several safety and protection features, such as under voltage lockout and temporary temperature protection. The combination of these various features makes the IHW50N65R5XKSA1 an excellent choice for applications requiring reliable and high performance switching capabilities. This makes it an ideal choice for a wide range of applications including motors, robotics, welding, and power generation.
In conclusion, the IHW50N65R5XKSA1 is an innovative product designed specifically for power electronic applications. Its ability to switch high currents and voltages makes it a great choice for various power-related applications. It is also equipped with a variety of safety and protection features, making it a reliable and safe option for many applications. Moreover, its small size and integration factor make it well suited for applications where space is limited.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IHW50N65R5XKSA1 | Infineon Tec... | 3.28 $ | 240 | IGBT 650V 80A 282W TO247I... |
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