IHY20N135R3XKSA1 Allicdata Electronics
Allicdata Part #:

IHY20N135R3XKSA1-ND

Manufacturer Part#:

IHY20N135R3XKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1350V 40A 310W TO247HC-3
More Detail: IGBT Trench 1350V 40A 310W Through Hole PG-TO247HC...
DataSheet: IHY20N135R3XKSA1 datasheetIHY20N135R3XKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 1.3mJ (off)
Supplier Device Package: PG-TO247HC-3
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Test Condition: 600V, 20A, 15 Ohm, 15V
Td (on/off) @ 25°C: -/335ns
Gate Charge: 195nC
Input Type: Standard
Series: TrenchStop®
Power - Max: 310W
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Current - Collector Pulsed (Icm): 60A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 1350V
IGBT Type: Trench
Part Status: Obsolete
Packaging: Tube 
Description

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Introduction

The IHY20N135R3XKSA1 is a single, insulated gate bipolar transistor (IGBT) device produced by International Rectifier. This device offers a new level of performance compared to other IGBTs available on the market, such as increased current carrying capability and increased power density, which makes it suitable for use in various applications. This article will discuss the various application fields, as well as the working principle, of the IHY20N135R3XKSA1 IGBT.

Application Fields

The IHY20N135R3XKSA1 has a variety of application fields, making it a versatile and useful tool for engineers to utilize. It can be used in a variety of switching applications, such as motor control, UPSs, welding machines, and plasma cutters. Additionally, it is also suitable for power electronics circuits, as well as renewable energy applications such as solar inverters. Finally, this device is also applicable in automotive and transportation applications, such as powertrain systems and vehicle controllers.

Working Principle

At the heart of the IHY20N135R3XKSA1 is its IGBT structure. This device is a combination of a field-effect transistor (FET) and a bipolar junction transistor (BJT). The FET part is responsible for conducting the main current flow, while the BJT part provides the controlling signal for the FET. In use, a small current is applied to the gate of the device, which will turn the device on and cause current to flow across the circuit. The current will then be controlled by the gate-to-source voltage, where a higher voltage will result in more current flow.

Conclusion

The IHY20N135R3XKSA1 is a highly versatile and powerful IGBT device that is suitable for a variety of applications. Its high current carrying capability and power density make it an ideal choice for switching applications such as motor control, UPSs, and welding machines, as well as power electronics and renewable energy applications. Additionally, the device\'s IGBT structure provides a great level of control over the current, allowing engineers to properly manage their circuits.

The specific data is subject to PDF, and the above content is for reference

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