Allicdata Part #: | IKB03N120H2ATMA1TR-ND |
Manufacturer Part#: |
IKB03N120H2ATMA1 |
Price: | $ 0.78 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 9.6A 62.5W TO220-3 |
More Detail: | IGBT 1200V 9.6A 62.5W Surface Mount PG-TO263-3-2 |
DataSheet: | IKB03N120H2ATMA1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1000 +: | $ 0.71295 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Not For New Designs |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 9.6A |
Current - Collector Pulsed (Icm): | 9.9A |
Vce(on) (Max) @ Vge, Ic: | 2.8V @ 15V, 3A |
Power - Max: | 62.5W |
Switching Energy: | 290µJ |
Input Type: | Standard |
Gate Charge: | 22nC |
Td (on/off) @ 25°C: | 9.2ns/281ns |
Test Condition: | 800V, 3A, 82 Ohm, 15V |
Reverse Recovery Time (trr): | 42ns |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3-2 |
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The IKB03N120H2ATMA1 is a single IGBT transistor. It is part of a family of IGBTs that are called "Intelligent Power Modules". IGBTs (Insulated Gate Bipolar Transistors) are a type of transistor that combines the properties of an unipolar transistor and a bipolar transistor, allowing for very high power efficiency.
The IKB03N120H2ATMA1 has an active collector-emitter area of 60cm squared, a collector-base voltage of 800V and a collector current of 30A. It is designed for motor control applications, with a typical switching frequency range of 0-20kHz. It also has a high current rating, as well as lowsaturation voltage.
The IKB03N120H2ATMA1 is suitable for use in a number of applications, including motor control, inverter control, unified power devices and other power control applications. It is suitable for use in devices that need to switch high current loads at high frequencies, up to 20kHz, and the high current rating allows it to handle higher power loads than other devices of a similar size.
In terms of its working principle, the IKB03N120H2ATMA1 works like a traditional bipolar transistor, but with an additional gate-voltage controlling its behavior. The gate voltage is used to control the breakdown voltage between the collector and the emitter of the transistor, allowing the current to flow through or be blocked. When the gate voltage increases to a certain voltage threshold, the device will trigger, allowing the current to flow. When the voltage is below the threshold, it is blocked from flowing, preventing any current from passing.
The device also has a very low on-state voltage drop, which helps to ensure that it can switch rapidly and with little power losses. This makes it an efficient and cost-effective way to control power applications. Additionally, the relatively low gate drive voltage required to switch the device makes it ideal for use with microcontrollers and other low-voltage devices.
Overall, the IKB03N120H2ATMA1 is a reliable and efficient transistor and is suitable for a variety of applications. It is capable of switching high current loads and is energy efficient, making it a good option for high-powered and cost-effective applications.
The specific data is subject to PDF, and the above content is for reference
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