Allicdata Part #: | IKB30N65EH5ATMA1-ND |
Manufacturer Part#: |
IKB30N65EH5ATMA1 |
Price: | $ 1.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | INDUSTRY 14 |
More Detail: | IGBT Trench Field Stop 650V 55A 188W Surface Mount... |
DataSheet: | IKB30N65EH5ATMA1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1000 +: | $ 1.34164 |
Specifications
Series: | TrenchStop™ 5 |
Part Status: | Active |
RoHS Status: | RoHS Compliant |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 55A |
Current - Collector Pulsed (Icm): | 90A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 30A |
Power - Max: | 188W |
Switching Energy: | 870µJ (on), 300µJ (off) |
Input Type: | Standard |
Gate Charge: | 70nC |
Td (on/off) @ 25°C: | 24ns/159ns |
Test Condition: | 400V, 30A, 22 Ohm, 15V |
Reverse Recovery Time (trr): | 75ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Description
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IKB30N65EH5ATMA1: Application Field and Working Principle
IGBTs are a type of power semiconductor switch used for high voltage high-frequency applications such as motor control and high-efficiency power conversion. These components have a low total cost of ownership and can be readily integrated with other components due to their versatility and reliability. The IKB30N65EH5ATMA1 is a single-channel insulated gate bipolar transistor (IGBT) with a maximum collector-emitter voltage of 650V, a total gate charge of 5.2nC, and a maximum collector current of 33A.Application Field
The IKB30N65EH5ATMA1 is a suitable component for medium- to high-power applications in the automotive, industrial, and consumer markets. It offers a variety of features and characteristics that make it a great fit for such applications. Its medium voltage and on-state resistance capability make it ideal for controlling motors, particularly in drive systems. Its high level of loop integration enables fast switching and extremely precise control of current, while the lower gate charge reduces switching losses. The component is also popular in DC/DC converters, , used in solar energy systems, UPS systems and telecom power supplies.Working Principle
The IKB30N65EH5ATMA1 utilizes a three-terminal switching power semiconductor device in which the input (gate), the output (collector) and the control (base) of the circuit is connected together. This component operates on the principle that when an appropriate voltage is applied to the control terminal, it generates a magnetic field due to the flow of the current and turns on the collector, allowing it to draw current from the source.To turn off the component, the control terminal reverses the direction of the magnetic field, which then causes the current to be cut off at the collector. The IKB30N65EH5ATMA1 utilizes this same principle in order to output high power efficiently and accurately. This component\'s low gate current and relatively low threshold voltage make it a great choice for high-frequency applications.Conclusion
The IKB30N65EH5ATMA1 is a versatile single-channel IGBT component that offers power and switching accuracy. This component is suitable for various medium- to high-power automotive, industrial, and consumer applications, making it a great choice for controlling motors, DC/DC converters, and other similar power requirements. Furthermore, its low gate charge and relatively low threshold voltage enable fast and precise control of current, allowing it to be used in high-frequency applications.The specific data is subject to PDF, and the above content is for reference
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