IKI04N60TXKSA1 Allicdata Electronics
Allicdata Part #:

IKI04N60TXKSA1-ND

Manufacturer Part#:

IKI04N60TXKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 8A 42W TO262-3
More Detail: IGBT Trench Field Stop 600V 8A 42W Through Hole PG...
DataSheet: IKI04N60TXKSA1 datasheetIKI04N60TXKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: TrenchStop®
Packaging: Tube 
Part Status: Obsolete
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 8A
Current - Collector Pulsed (Icm): 12A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Power - Max: 42W
Switching Energy: 143µJ
Input Type: Standard
Gate Charge: 27nC
Td (on/off) @ 25°C: 14ns/164ns
Test Condition: 400V, 4A, 47 Ohm, 15V
Reverse Recovery Time (trr): 28ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3-1
Description

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Introduction

IKI04N60TXKSA1 is a single IGBT that is used in many different applications. It is the perfect choice for applications including low voltage drives, DC-DC converters, motor control and more. The IKI04N60TXKSA1 are designed to provide high reliability, low emissions and low noise performance as well as low product cost. IKI04N60TXKSA1 can be used in automotive, industrial and consumer applications.

Working Principle

IKI04N60TXKSA1 is based on a field-effect transistor (FET) technology combined with an intrinsic gate insulation layer. This layer serves as an electrical isolation between drain and source and allows a fast switching operation. An FET typically works as an amplification device. When a voltage is applied to the drain, it causes a variation in current between the drain and the source of the transistor. This current produces a field within the gate insulation layer, thus controlling the current switching process. Additionally, with the IKI04N60TXKSA1, current will flow through and be regenerated inside the transistor before being output at the drain and source. This also lowers switching losses and further enhances device performance.

Applications

The IKI04N60TXKSA1 can be used in a variety of applications.Automotive: This device can be used in automotive applications such as electric vehicles and hybrid vehicles. Switching is smooth and fast, ensuring efficient transmission and performance. Industrial: This device can be used for motor control in industrial applications. Its features allow for smooth transitions between phases and speed control, thus providing precise control. Consumer: IKI04N60TXKSA1 makes an ideal solution for consumer applications such as home appliances and consumer electronics. This device can help reduce noise and improve energy efficiency.

Conclusion

The IKI04N60TXKSA1 is a single IGBT device which, thanks to its FET technology and intrinsic gate insulation layer, provides high reliability, low emissions and low noise performance as well as low switching losses. This makes it suitable for automotive, industrial and consumer applications such as electric vehicles, motor control, home appliances and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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