IKP30N65H5XKSA1 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IKP30N65H5XKSA1 is a single IGBT transistor and is often used in a variety of applications. This device is a 650 V, 30 A, 40 W, Trench Gate type IGBT made with a NPT technology that has approximately 37% lower transistor resistance and 75% lower switching losses compared to standard products. The device is also used to control a variety of high current and high voltage applications using its maximum junction temperature of 150°C.

The IKP30N65H5XKSA1 device is used in applications such as lighting, motor control, power supplies, medical systems, ATE and power amplifiers. It is also used for automotive load switching such as LED lighting, inverter control, and ignition systems. The device also offers improved speed and performance compared to other IGBT transistors, allowing for better control in various applications.

One of the key features of this IGBT is its soft recovery diode. The diode contains a rapid reverse recovery time of 2 us, which allows for higher efficiency in power management. This allows the device to transition from on to off quickly, decreasing the amount of power wasted in applications. The soft recovery diode also reduces the chance of stress-induced melting due to high frequency levels, enabling better performance.

In addition, the IKP30N65H5XKSA1 IGBT has an isolation voltage of 600V, offering more isolation and better protection in applications. The device also has a high-current surge capability and is able to handle large amounts of current without damage to the device. This allows for increased protection in sensitive applications.

The IKP30N65H5XKSA1 IGBT has a dual switch design in order to maximise the efficiency of the circuit. This design uses two stages to control current flow, enabling better control over the device performance. The first stage is the gate driver, which is used to open and close the gate of the transistor. This stage controls the timing of the switch on or off. The second stage is the body diode, which allows the current to switch in a reverse direction and maintain the power transfer during the process.

The use of DDC (digital dual control) helps to reduce switching losses and power consumption. This technology allows for the adjustment of the switching frequency and adjusting the output delay of the control signal. This gives the user more control over vulnerable applications, as the switching speed can be adjusted and optimized accordingly.

The IKP30N65H5XKSA1 IGBT is an effective device for controlling high current and high voltage applications, as it has low on-state voltage drops, low parasitic on-state losses, and high switching energy and switching speed. This makes it a great choice for applications that require high power delivery and fast switching speeds. In addition to its low on-state voltage drops, the device also has a lower threshold voltage, allowing for an easier and faster transition between on and off states.

Overall, the IKP30N65H5XKSA1 IGBT device is a great choice for applications requiring high current and voltage levels. Its dual switch design and soft recovery diode enable improved control and better protection in applications, while its low on-state voltage drop, low parasitic on-state losses, and high switching energy allow for higher efficiency and better performance. Additionally, with the improved speed and performance of this device, applications requiring high power delivery and fast switching speeds can be easily achieved.

The specific data is subject to PDF, and the above content is for reference