IKP40N65H5XKSA1 Discrete Semiconductor Products

Series:	TrenchStop®
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector (Ic) (Max):	74A
Current - Collector Pulsed (Icm):	120A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 40A
Power - Max:	255W
Switching Energy:	390µJ (on), 120µJ (off)
Input Type:	Standard
Gate Charge:	95nC
Td (on/off) @ 25°C:	22ns/165ns
Test Condition:	400V, 20A, 15 Ohm, 15V
Reverse Recovery Time (trr):	62ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO-220-3

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Introduction

The IKP40N65H5XKSA1 is a single, insulated gate bipolar transistor (IGBT) suitable for power applications. Due to their low on-state voltage drop, low switching noise and fast switching times, IGBTs can provide a variety of power benefits for electronic devices. Because of this, IGBTs are commonly found in power electronics equipment such as inverters and motor drives.The IKP40N65H5XKSA1 is well-suited for these applications thanks to its high forward blocking voltage rating of 650V, maximum collector current of 40A, and its moderate thermal resistance between the collector and heat sink, which is 0.82℃/ W. Additionally, the device has a maximum junction temperature of up to 150°C, which enables it to operate in tough environmental conditions.

Application Fields

One of the primary applications of the IKP40N65H5XKSA1 is power supply design. This IGBT is ideal for high-efficiency systems, where its low on-state voltage drop and fast switching speeds can contribute to considerable power savings over its traditional counterparts. Furthermore, IKP40N65H5XKSA1\'s high forward blocking voltage rating makes it suitable for use in AC/DC and DC/DC converters as well as other components that require high-voltage blocking capabilities.Furthermore, the IKP40N65H5XKSA1 can be used in motor control applications. Its combination of low on-state voltage drop and fast switching speeds enables it to efficiently control the speed and torque of motors by adjusting the frequency of its switching cycle. As a result, IKP40N65H5XKSA1 can be used for applications such as Variable Frequency Drives (VFDs), where it efficiently adjusts the speed of a fan or motor.In addition to power and motor control applications, the IKP40N65H5XKSA1 can also be used in solar inverters, where its availability of high power, fast switching speeds and low switching losses allow it to handle large amounts of power with minimal losses. Similarly, the IKP40N65H5XKSA1 can also be used in high-frequency applications, where its low switching losses provide it with a performance edge over conventional power devices.

Working Principle

The IKP40N65H5XKSA1 works on the principle of the Insulated-Gate Bipolar Transistor (IGBT) which is a voltage-controlled device. It is a combination of a BJT and a MOSFET connected in series to form a three-layer, four-terminal device. In the IKP40N65H5XKSA1 design, the collector-emitter voltage (Vce) is controlled by the gate-source voltage (Vgs).As the voltage applied to the device’s gate terminal increases, a corresponding increase in the current flow through the device’s collector and emitter terminals is seen. This increase in current gives the IKP40N65H5XKSA1 its fast switching capability. As the gate voltage continues to increase, the device goes into a fully-on mode and the collector-emitter voltage drops to its minimum value and does not change until the device is switched off.The IKP40N65H5XKSA1’s gate-to-source capacitance is also important for its operation. This capacitance determines the amount of charge that needs to be applied to the gate terminal in order to turn the device on or off. Generally, this requires low gate-to-source drive currents to be applied to the device, enabling it to be driven efficiently with low power MOSFET drivers.

Conclusion

The IKP40N65H5XKSA1 is a single insulated gate bipolar transistor (IGBT) with a wide range of applications. Due to its low on-state voltage drop, fast switching speeds and low thermal resistance, the IKP40N65H5XKSA1 is suitable for power supply design, motor control systems, high-frequency applications, and solar inverters. It works on the principle of the insulated-gate bipolar transistor in which the collector-emitter voltage (Vce) is controlled by the gate-source voltage (Vgs). Furthermore, its gate-to-source capacitance determines the amount of charge required to be applied to the gate terminal in order to turn the device on or off.

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