Allicdata Part #: | IKQ50N120CT2XKSA1-ND |
Manufacturer Part#: |
IKQ50N120CT2XKSA1 |
Price: | $ 7.80 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 100A TO247-3-46 |
More Detail: | IGBT Trench Field Stop 1200V 100A 652W Through Hol... |
DataSheet: | IKQ50N120CT2XKSA1 Datasheet/PDF |
Quantity: | 240 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 7.08750 |
10 +: | $ 6.51357 |
100 +: | $ 5.50091 |
500 +: | $ 4.89343 |
Power - Max: | 652W |
Supplier Device Package: | PG-TO247-3-46 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Test Condition: | 400V, 50A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 34ns/312ns |
Gate Charge: | 235nC |
Input Type: | Standard |
Switching Energy: | 3.8mJ (on), 3.3mJ (off) |
Series: | TrenchStop™ |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 50A |
Current - Collector Pulsed (Icm): | 200A |
Current - Collector (Ic) (Max): | 100A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
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The IKQ50N120CT2XKSA1 is a type of electric device belonging to a class of components known as Transistors - IGBTs - Single. This type of Transistor-IGBT is a single, non-isolated, planar, insulated gate bipolar transistor (IGBT). It is typically used in industrial, commercial, and automotive applications, where three-phase motor control, as well as other control and power management, are needed.
An IGBT transistor is a semiconductor switch that acts as both an insulating and a conducting element in power electronics circuits. Its structure and behavior combine the characteristics of both a MOSFET and a bipolar transistor. This makes it a versatile device capable of regulating high-power levels both efficiently and safely.
The IKQ50N1200CT2XKSA1 IGBT transistor belongs to the Ultrafast IGBT family. It is used for applications that require fast switching, high current, and high frequency. Due to its optimized switching performance, voltage versus current requirements are lower in comparison to other IGBT devices. This makes it an ideal choice for high-frequency applications.
The IKQ50N1200CT2XKSA1 is a Non-punch Through (NPT) type Series IGBT. NPT IGBTs provide excellent thermal characteristics with low conduction and switching losses. They have a low on-state resistance and a high current carrying capacity. This makes them suitable for use in applications where high frequency and low switching loss are required.
The IKQ50N 1200CT2XKSA1 is designed for a maximum operating voltage of 1200V and a peak collector current of 50A. It has a collector-emitter voltage blocking capability of 1200V and a gate-emitter voltage of 20V. The maximum junction temperature of the device is 125°C and its maximum storage temperature is 150°C. Its switching frequency range extends up to 10KHz.
The IKQ50N1200CT2XKSA1 works by controlling an electrical load with a turn off and turn on voltage. When the gate voltage is zero, the device acts as an insulator and no current flows through it. When the gate voltage rises, the device turns on, allowing current to flow. This is known as the working principle of an IGBT.
In conclusion, the IKQ50N1200CT2XKSA1 is an Ultrafast IGBT manufactured by Infineon Technologies. It is highly efficient, reliable and suitable for use in a variety of applications that require fast switching and high frequency operations. Due to its optimized operation, it lowers the voltage versus current requirements, thus making it an ideal choice for most motor control and power management applications.
The specific data is subject to PDF, and the above content is for reference
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