IKQ75N120CH3XKSA1 Discrete Semiconductor Products

Power - Max:	938W
Supplier Device Package:	PG-TO247-3-46
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 175°C (TJ)
Test Condition:	600V, 75A, 6 Ohm, 15V
Td (on/off) @ 25°C:	34ns/282ns
Gate Charge:	370nC
Input Type:	Standard
Switching Energy:	6.4mJ (on), 2.8mJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.35V @ 15V, 75A
Current - Collector Pulsed (Icm):	300A
Current - Collector (Ic) (Max):	150A
Voltage - Collector Emitter Breakdown (Max):	1200V
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Lead Free Status / RoHS Status:	--
Part Status:	Active

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Introduction:The IKQ75N120CH3XKSA1 is a high-voltage, low-power IGBT (Insulated Gate Bipolar Transistor) switch designed for use in a variety of applications. It is a single low-power device, meaning it does not require multiple components to operate as a switch, making it an efficient and reliable choice for various applications. Here, we will discuss its application field, as well as its working principle.Application Field:The IKQ75N120CH3XKSA1 is used primarily in applications such as solar inverters and auto-switching systems. It is particularly suitable for highly compact and lightweight system designs, providing users with high power-density solutions when needed. For instance, this device is used in the control circuit of a solar inverter, as it can switch between two states (high-voltage and low-voltage) multiple times a second, helping to ensure efficient and reliable operation. It is also used in auto-switching systems, where it can switch on and off at high-speed when needed.The IKQ75N120CH3XKSA1 is also used in some light-emitting diode (LED) applications due to its low power consumption. LED lighting systems often require a reliable switch, and the IKQ75N120CH3XKSA1 is able to provide this feature.Working Principle:The IKQ75N120CH3XKSA1 is a type of bipolar transistor, meaning it has two distinct layers of semiconductor material, one p-type (positive) and one n-type (negative). When a positive voltage is applied to the gate (G), it forms an electrostatic field which activates the p-type layer, allowing electrons to pass through. This, in turn, causes current to flow between the two semiconductor layers, allowing it to switch between states at high-speed.The IKQ75N120CH3XKSA1 is designed to be low-power and have an exceptionally high voltage rating, allowing it to handle varied applications such as solar inverters and LED lighting systems. It also has a low on-state resistance, meaning it is able to handle high-current applications reliably and efficiently.Conclusion:The IKQ75N120CH3XKSA1 is a high-voltage, low-power IGBT switch which is suited for a variety of applications, such as solar inverters and LED lighting systems. Its working principle is based on the concept of bipolar transistors, in which a positive voltage applied to the gate forms an electrostatic field which activates the p-type layer, allowing electrons to pass through and current to flow between the two semiconductor layers. Due to its low power consumption and high-voltage rating, this device is able to provide reliable and efficient solutions for users when required.

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