IKU15N60RBKMA1

Series:	TrenchStop®
Packaging:	Tube
Part Status:	Obsolete
IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	30A
Current - Collector Pulsed (Icm):	45A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 15A
Power - Max:	250W
Switching Energy:	900µJ
Input Type:	Standard
Gate Charge:	90nC
Td (on/off) @ 25°C:	16ns/183ns
Test Condition:	400V, 15A, 15 Ohm, 15V
Reverse Recovery Time (trr):	110ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	PG-TO251-3

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Transistors - IGBTs - SingleThe IKU15N60RBKMA1 is a new addition to the large variety of field effect transistors. An IGBT, or insulated gate bipolar transistor, is designed to provide fast switching performance, but with a much lower on-state voltage drop compared to conventional bipolar types of transistors. This makes it an excellent choice for power applications that require a quick, low voltage switching element. The IKU15N60RBKMA1 combines the best attributes of both bipolar junction transistors and insulated gate field effect transistors. It is a three terminal device with a gate terminal connected to an isolated gate FET and two collector terminals connected to a Bipolar transistor. The IKU15N60RBKMA1 is housed in a TO-220F package, which means it can be easily connected to a circuit board. This device has a rated current of 15A and a maximum rating of 600V and 600A surge, making it suitable for various power applications.The working principle of an IGBT works by varying the voltages and current between the gate, emitter and collector of the device. When a voltage is applied across the gate-emitter, a short circuit is created as current flows through the device. This in turn increases the voltage seen across the collector-emitter, thus making the device turn on. By controlling the voltage applied to the gate, its collector-emitter voltage can be varied. The amount of current flowing from the collector to the emitter is limited by the on-resistance of the device. One of the biggest advantages of using an IGBT over other transistors is its fast switching capability. An IGBT can turn on and off in a fraction of a second and at high frequency, which can increase the overall efficiency of a power application. Furthermore, due to its low on-resistance, it also reduces power loss and heat dissipation.The IKU15N60RBKMA1 is a great choice for power applications that require a fast switching element. With its low on-resistance and the maximum rating of 600V, it can easily handle large power signals and at the same time give off minimal heat. Due to its fast switching speed, it enables an overall increase in efficiency, making it suitable for switching amplifiers and dc-dc converters. It is also very easy to install and configure on a circuit board due to its TO-220F package. In conclusion, the IKU15N60RBKMA1 is a great choice for power applications due to its fast switching speed, low on-resistance and maximum rating of 600V. Its ease of installation and configuration further make it an attractive choice for applications in switching amplifiers and dc-dc converters.

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