IKW08T120FKSA1 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

In the world of transistors, one type of transistor stands out by combining features of both bipolar and field-effect transistors, offering low collector-emitter saturation voltage and high input impedance. This transistor is the insulated gate bipolar transistor (IGBT), which is able to switch quickly and consume less energy.

The IKW08T120FKSA1 is a single-phase, surface mount IGBT from Infineon Technologies, specifically designed for use in high current and/or high voltage switching applications such as home appliances and power tools. This special device features a tried and tested, reliable vertical structure, 600V blocking voltage, an internal protection circuit to prevent problems due to under- and overvoltage, and the ability to stand a continuous current of 8A. This specific IGBT allows for a 650V voltage stress and is excellent for use in transmission, motor control and renewable energy applications, especially those which involve heavy currents. This is because the device is able to deliver a high level of ruggedness and reliability while consuming less energy than many other transistors in the same power range.

Before we look at how the IKW08T120FKSA1 works, let us first discuss the basic working principles of an IGBT. Essentially, an IGBT is a technology which combines the advantages of both MOSFETs and BJTs. It has an insulated gate like a MOSFET and a voltage-controlled current like a BJT, giving it the ability to carry high voltage and currents. To understand how the IGBT works, we must first look at the four fundamental modes of operation for it.

In a basic IGBT, the potential at the gate determines the mode of conduction. If the gate potential is equal to or lower than the potential of the collector, the transistor is in the blocking state and there is no current flowing from collector to emitter.If the gate potential is higher than the collector potential, the transistor is in the conducting state and current can flow from collector to emitter. The amount of current that can flow through the transistor is determined by the magnitude of the potential difference between the collector and the gate.When in the conduction state, the IGBT acts like a P-N-P transistor, operating in forward bias mode.

When it comes to the IKW08T120FKSA1 transistor, it exploits the BiCMOS technology to offer both bipolar and field effect characteristics. It has a vertical structure which not only provides insulation, but also provides a creepage distance of greater than 8mm. This particular property is beneficial when the power supply voltage is greater than the VCE voltage. The device also features a very high frequency with low inductance, high load current and high speed switching capability.

The IKW08T120FKSA1 also features a low collector-emitter saturation voltage and a very high input impedance. This makes the device very efficient and is able to switch quickly, allowing for limited power dissipation and improved energy savings. This transistor is also very rugged, able to withstand high temperatures and transient voltage. Together, these features make the device ideal for a wide range of applications, especially in high current and/or high voltage, which include industrial systems, cooling and lighting, renewable energy, and power tools.

In conclusion, the IKW08T120FKSA1 is a single-phase surface mount IGBT which is specially designed for applications requiring high current and/or high voltage. It combines the advantages of both MOSFETs and BJTs and it is able to switch quickly and consume less energy while providing a very good ruggedness and reliability. This transistor is ideal for use in transmission, motor control, industrial systems, cooling and lighting, and many other applications.

The specific data is subject to PDF, and the above content is for reference