IKW15N120T2FKSA1 Discrete Semiconductor Products |
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Allicdata Part #: | IKW15N120T2FKSA1-ND |
Manufacturer Part#: |
IKW15N120T2FKSA1 |
Price: | $ 2.70 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 30A 235W TO247-3 |
More Detail: | IGBT Trench 1200V 30A 235W Through Hole PG-TO247-3 |
DataSheet: | IKW15N120T2FKSA1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
240 +: | $ 2.45731 |
Series: | TrenchStop® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 30A |
Current - Collector Pulsed (Icm): | 60A |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 15A |
Power - Max: | 235W |
Switching Energy: | 2.05mJ |
Input Type: | Standard |
Gate Charge: | 93nC |
Td (on/off) @ 25°C: | 32ns/362ns |
Test Condition: | 600V, 15A, 41.8 Ohm, 15V |
Reverse Recovery Time (trr): | 300ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IKW15N120T2FKSA1 is an insulated gate bipolar transistor (IGBT) that is used to control electric power in various applications. It is designed to operate in a single-ended, half-bridge power electronic applications that require high switching speeds with low conduction losses. This transistor is ideally used for switching higher voltage and higher current applications in motor drives, power supplies, and other power conversion applications.The IKW15N120T2FKSA1 is a true gate-turn-off IGBT that can be used in high performance motor control applications. It has a high blocking voltage of 1200 volts (Vceo) and a rated current of 15 amperes (Ic), allowing for greater power handling capability. It has a low gate-emitter voltage of 2V (Vg) and a high DC link current of 85 amps. With a maximum junction temperature rating of 175°C, it can operate in harsh environments.The IKW15N120T2FKSA1 is designed with a low dynamic resistance of 2.8 milliohms (Rds) and a low switching speed of 12 nanoseconds (tr ), allowing for fast and efficient switching operations. This IGBT also has a low thermal resistance of 4.2 °C/W, which helps it to operate at lower temperatures, aiding the overall efficiency of the system.The working principle of IKW15N120T2FKSA1 revolves around the concept of a three-terminal device. The overall operation of the transistor is based on the fact that a forward voltage is necessary at its base in order to turn it on. When a positive voltage is applied to the collector and an appropriate negative voltage is applied to the emitter, current will flow through the transistor, allowing a current flow from the collector to the emitter. This current will be amplified by the transistor such that a much larger current is allowed to flow in the opposite direction.The IKW15N120T2FKSA1 is used in a wide range of applications including motor drives, power supplies, renewable energy, consumer electronics, lighting, and other industrial applications. These transistors can also be used for low-voltage DC link applications and are suitable for high-frequency motor drives and soft switching applications.In conclusion, the IKW15N120T2FKSA1 is a reliable and efficient IGBT for power switching applications. It has a high current rating with low on-state losses, making it ideal for applications requiring high-speed switching in a wide range of industries. With its low switching time and low thermal resistance, this IGBT is suitable for a variety of applications where high performance and power handling capabilities are required.
The specific data is subject to PDF, and the above content is for reference
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