Allicdata Part #: | IKW60N60H3FKSA1-ND |
Manufacturer Part#: |
IKW60N60H3FKSA1 |
Price: | $ 3.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 80A TO247-3 |
More Detail: | IGBT Trench Field Stop 600V 80A 416W Through Hole ... |
DataSheet: | IKW60N60H3FKSA1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
240 +: | $ 3.12866 |
Series: | TrenchStop™ |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 80A |
Current - Collector Pulsed (Icm): | 180A |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 60A |
Power - Max: | 416W |
Switching Energy: | 2.1mJ (on), 1.13mJ (off) |
Input Type: | Standard |
Gate Charge: | 375nC |
Td (on/off) @ 25°C: | 27ns/252ns |
Test Condition: | 400V, 60A, 6 Ohm, 15V |
Reverse Recovery Time (trr): | 143ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGBT or Insulated Gate Bipolar Transistor is a power semiconductor device used to control electrical power in an electrical circuit. It is an advanced type of power transistor commonly used in a wide range of applications in electrical circuits both in AC and DC. It provides economical, reliable and efficient power control. The IGBT or Single is one of the most distinguished IGBTs. This makes it popular in applications including robotics, automation, industrial, medical and automotive.
The IKW60N60H3FKSA1 is a unique IGBT module with an industrial grade protection rating. It is made from three identical IGBTs with an improved thermal design and higher switching speeds. Its maximum collector current is rated at up to 600A. Its maximum collector to emitter breakdown voltage is 600V. This IGBT is suitable for both AC and DC applications in which the current and voltage requirements are of moderate power levels.
The main application fields of IKW60N60H3FKSA1 include motor control, welding, lighting control, active rectification, ventilation control, electrical energy conversion, agriculture, heating and cooling systems, energy storage systems, electric vehicle drive systems and power supply.
The basic working principle of IKW60N60H3FKSA1 is similar to a transistor. It consists of three terminals namely the emitter, base and collector. A suitable voltage is applied to the base-emitter terminal to create an electric field resulting in current flow from the emitter to the collector. With the help of a gate control the current flow in two directions from the collector to the emitter and from the emitter to the collector.
Due to its wide range of application fields and advanced thermal design, the IKW60N60H3FKSA1 can be used in a variety of industries such as automotive, industrial, and medical. Moreover, due to its high switching speed, high reliability and power rating, it is perfect for applications where high power is required. Furthermore, the IKW60N60H3FKSA1 is cost effective and offers higher efficiency while providing electrical power control.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IKW60N60H3FKSA1 | Infineon Tec... | 3.44 $ | 1000 | IGBT 600V 80A TO247-3IGBT... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
IGBT 1200V TO247-3IGBT
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
IGBT 600V TO-247 COPAKIGBT
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
POWER MOSFET TO-3IGBT