IKY40N120CH3XKSA1

Switching Energy:	2.18mJ (on), 1.3mJ (off)
Supplier Device Package:	PG-TO247-4
Package / Case:	TO-247-4
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	350ns
Test Condition:	600V, 40A, 12 Ohm, 15V
Td (on/off) @ 25°C:	30ns/280ns
Gate Charge:	190nC
Input Type:	Standard
Series:	--
Power - Max:	500W
Vce(on) (Max) @ Vge, Ic:	2.35V @ 15V, 40A
Current - Collector Pulsed (Icm):	160A
Current - Collector (Ic) (Max):	80A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	--
Lead Free Status / RoHS Status:	--
Part Status:	Active

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to IKY40N120CH3XKSA1

The IKY40N120CH3XKSA1is a 900V IGBT from Infineon Technologies that is designed to offer a low conduction loss, high switching speed, and improved reliability. This IGBT is ideally suited for use in applications such as switching circuits with demanding operational requirements, given its low on -state resistance and fast turn-on speed.

Application Field and Working Principle

The IKY40N120CH3XKSA1 is typically used in applications that involve high-speed switching, including power-conversion applications such as motor drives, switch-mode power supplies (SMPS), UPS, and welding systems. The device offers dramatic power-saving possibilities in these applications due to its low on-state resistance and high switching speeds.This IGBT is designed to provide efficient switching with the help of its improved anti-parallel diode. This diode incorporates a reverse-recovery charge characteristic which enables fast switching and eliminates switching losses. The low gate charge reduces remaining turn-off losses and ensures improved noise immunity during operation.The IKY40N120CH3XKSA1 also features a field-stop structure that ensures control between the collector and emitter is at its optimal level. The combination of the low-on-state resistance of the device and the improved charge recovery diode gives this IGBT an efficient switch-on operation even under large current capabilities. Therefore, it is able to offer consistent performance and improved reliability, even under high temperature conditions.

Conclusion

The IKY40N120CH3XKSA1, is an exceptional IGBT offering from Infineon Technologies. Its low conduction loss, high switching speed, improved anti-parallel diode, field-stop structure, and low gate charge all ensure improved reliability in applications that involve fast-switching power-conversion systems. Its improved thermal management further adds to its versatility and operating speed, making it ideal for use in motor drives, switch-mode power supplies (SMPS), UPS, and welding systems.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description