IKY50N120CH3XKSA1 Allicdata Electronics
Allicdata Part #:

IKY50N120CH3XKSA1-ND

Manufacturer Part#:

IKY50N120CH3XKSA1

Price: $ 8.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 100A TO247-4
More Detail: IGBT 1200V 100A 652W Through Hole PG-TO247-4
DataSheet: IKY50N120CH3XKSA1 datasheetIKY50N120CH3XKSA1 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 7.35210
10 +: $ 6.75423
100 +: $ 5.70459
500 +: $ 5.07462
Stock 1000Can Ship Immediately
$ 8.09
Specifications
Switching Energy: 2.3mJ (on), 1.9mJ (off)
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 255ns
Test Condition: 600V, 50A, 10 Ohm, 15V
Td (on/off) @ 25°C: 32ns/296ns
Gate Charge: 235nC
Input Type: Standard
Series: --
Power - Max: 652W
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 100A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: --
Lead Free Status / RoHS Status: --
Part Status: Active
Description

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IGBT stands for Insulated Gate Bipolar Transistor, and the IKY50N120CH3XKSA1 model is a popular variation. IGBTs are unique semiconductor devices that are used to switch and amplify electronic signals. They are ideal for applications where speed and precision are important, such as power electronics, motor control, and high frequency switching. Here, we will discuss the application field and working principle of the IKY50N120CH3XKSA1 IGBT.

The IKY50N1200CH3XKSA1 IGBT is a fast-switching device with a low on-state voltage drop. It is designed to provide a high level of switching precision and power efficiency. It is suitable for a variety of applications, including AC and DC motors, inverters, converter circuits, and power supplies. It is a versatile device that can be used in both high-power and low-power applications.

The IKY50N1200CH3XKSA1 IGBT works by controlling the flow of current between two terminals. It does this by modulating the voltage applied to its gate terminal. IGBTs work by combining the characteristics of both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and BJTs (Bipolar Junction Transistors). When the gate voltage is below the threshold voltage, the IGBT acts as a switched-off MOSFET, preventing the current from flowing. When the gate voltage increases above the threshold voltage, the IGBT acts as a closed BJT, allowing current to flow between the collector and emitter terminals.

The IKY50N1200CH3XKSA1 IGBT is particularly useful in applications that require a fast switching speed. It is capable of switching as quickly as 7.5 ns, making it ideal for applications such as motor control and high frequency switching. The device also offers a low on-state voltage drop of 1.7V, ensuring that the device experiences minimal power losses when in operation. It has a current rating of up to 50A, making it suitable for both low- and high-power applications.

The IKY50N1200CH3XKSA1 IGBT is a versatile device that can be used in a number of different applications. It is particularly well-suited for applications that require a fast switching speed and low power losses. It offers a high level of switching precision and power efficiency, making it an ideal choice for power electronics, motor control, and high frequency switching.

The specific data is subject to PDF, and the above content is for reference

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