IRGH4607DPBF Allicdata Electronics
Allicdata Part #:

IRGH4607DPBF-ND

Manufacturer Part#:

IRGH4607DPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 8PQFN
More Detail: IGBT
DataSheet: IRGH4607DPBF datasheetIRGH4607DPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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The IRGH4607DPBF is an insulated gate bipolar transistor (IGBT) in the D²PAK package. It is a single IGBT with an integrated high speed anti-parallel diode from International Rectifier. This single IGBT is capable of reaching a collector current of 600 Amperes (A) at 25° Celsius (°C). Its maximum operating junction temperature is 175°C. The IGBT is rated at a voltage of 600V and can withstand up to a maximum of 600V repetitive peak off state voltage. The IRGH4607DPBF has been primarily designed for use in power switching applications. It can be used to control the on and off state of larger electrical circuits, allowing for different levels of switching, dimming and control. The device can also be used for freewheeling and crude speed control of motors. The IRGH4607DPBF contains two main components, an N-channel IGBT chip and a parallel fast-recovery diode. The device has three electrical terminals: a collector, a gate, and an emitter. The IGBT is switched on and off by varying the voltage applied to the gate terminal. When the voltage on the gate terminal is larger than the emitter voltage, the IGBT is turned on, allowing electrons to flow between the collector and emitter. When the voltage on the gate terminal is less than the emitter voltage, the IGBT is turned off and the current flow between the collector and emitter is interrupted. To ensure safe operation of the IGBT, the current flow in both directions must be limited. To accomplish this, the device contains an integrated anti-parallel diode. The diode forwards current when the polarity of the collector and emitter voltages are in the same direction and blocks current when polarity is reversed. This reduces the need for a separate external diode, thus reducing power losses and costs. Also included on the IRGH4607DPBF is an integrated fast recovery diode. The diode helps reduce power losses because it recovers the charge stored in the IGBT\'s parasitic capacitances. When the IGBT is switched off, the diode is activated to reduce the voltage at the IGBT\'s gate and quickly forward the charge stored in the parasitic capacitances to the output. Overall, the IRGH4607DPBF is a high-performance, high-reliability switching device that is ideal for power switching applications. Its integrated anti-parallel diode and fast recovery diode ensure reliable operation, while its high-current rating of 600A make it suitable for larger power switching projects.

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