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IS34MW04G084-TLI Memory: Application Field and Working Principle

IS34MW04G084-TLI is an advanced memory device that is used in a wide range of applications. Its main features include low power consumption, wide operating temperature range, high reliability and good data retention. This device is suitable for various industrial, embedded and consumer applications, such as computer peripherals, digital cameras, PDAs, gaming devices, etc.

The operating temperature of IS34MW04G084-TLI memory device is 0 to 70 degree Celsius and the data retention time is up to 20 years at 55 degree Celsius. This memory device has a range of data write time, ranging from 0.2 microseconds to 6 seconds, making it ideal for various data intensive applications. Additionally, this device supports error detection and correction, allowing it to maintain accurate data transfer.

IS34MW04G084-TLI memory device is highly reliable, thanks to its advanced technology. It is constructed with an innovative three dimensional cell structure, which helps protect data under high temperature and voltage conditions. Additionally, this device utilizes a Burst EDO architecture that provides enhanced performance when used in write operations.

In terms of its working principle, IS34MW04G084-TLI memory device makes use of a non-volatile flash memory technology. Basically, this device works by using an electronic tunneling effect to store charges in floating-gate transistors. These charges are used to store data and can only be accessed via a write/erase operation. Additionally, this device utilizes an Error Detection and Correction (EDC) mechanism to ensure the integrity of the data that it stores.

IS34MW04G084-TLI memory device is a suitable solution for any application that requires high precision data storage. Its low power consumption and wide temperature range make it ideal for embedded applications and its Burst EDO architecture helps to ensure data accuracy in write operations. Additionally, this device is protected by an advanced three dimensional cell structure and utilizes a reliable error detection and correction mechanism for improved data accuracy.

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