IS39LV010-70JCE

Series:	--
Packaging:	Tube
Part Status:	Not For New Designs
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	1Mb (128K x 8)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	32-LCC (J-Lead)
Supplier Device Package:	32-PLCC (11.43x13.97)

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Introduction of IS39LV010-70JCE

IS39LV010-70JCE is a 256K x 8 non-volatile 3.3V CMOS flash memory featuring a 1M-bit organization and advanced floating gate technology. This type of CMOS flash memory is used for integrated read/write processes, which requires reliable non-volatile storage media with fast program and erase times, such as digital appliances and hand-held computing devices. In this article, we will explain the application field and working principle of IS39LV010-70JCE.

Application Field of IS39LV010-70JCE

IS39LV010-70JCE is widely used in the digital appliance and hand-held computing devices, especially in the portable device with compact space, such as laptop, PDA and digital cameras, etc. It can provide reliable and fast read/write operation with low power consumption and support 3V operation.

Working Principle of IS39LV010-70JCE

IS39LV010-70JCE is a CMOS flash memory, which means it is made up of metal-oxide-semiconductor field-effect transistors (MOSFETs) and stores the data in a floating gate material, typically silicon oxide. The working principle of IS39LV010-70JCE is based on the “floating gate” principle. A high voltage charge is applied to electrons and the electrons are injected in the floating gate. The electrons are attracted to the other side of the floating gate, creating an electrostatic charge which stores the data.To erase the data, a negative voltage is applied to the transistor. The negative voltage causes the electrons to be drawn out of the floating gate and the data is erased. To write data, a high voltage is again applied to the transistor and the electrons are injected into the floating gate. This creates an electrostatic charge which stores the data.

Conclusion

In conclusion, IS39LV010-70JCE is a 256K x 8 non-volatile 3.3V CMOS flash memory featuring a 1M-bit organization and advanced floating gate technology. It is widely used in the digital appliance and hand-held computing devices. Its working principle is based on the “floating gate” principle, which involves the injection of electrons and the application of high and low voltage charges.

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