IS46TR16128BL-125KBLA2

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The IS46TR16128BL-125KBLA2 is a memory device commonly used in the consumer electronics, automotive, and communications industries. It is an on-chip array of 8K x 16, dual-voltage SRAMs (Static Random Access Memory). This memory device is designed for operation at temperatures ranging from -40 to +85 °C.

This type of memory device is well suited for applications requiring a high level of data security, as well as applications requiring reliability and low power. This type of memory device is mainly used to store executable code or important data, such as in car navigation systems and in Handsfree mobile handsets. It contains a dual-supply voltage structure, allowing the device to be used in multiple applications.

The IS46TR16128BL-125KBLA2 offers several features that make it suitable for a wide range of applications. Firstly, the device has a low operating voltage, making it an excellent choice for applications where power consumption is of concern. Secondly, it is designed for operation at temperatures ranging from -40 to +85 °C, thanks to its dual-voltage SRAMs. Thirdly, the 8K x 16 architecture enables the device to store up to 128KB of data with high speed access times.

In terms of working principle, the IS46TR16128BL-125KBLA2 memory device is essentially a grid of 8K x 16 dual-voltage SRAMs. Each of these SRAM cells stores one bit of data, either a "0" or "1". When a specific address is called, the memory retrieves the data stored in the corresponding SRAM cell. This process is repeated millions of times per second, providing access to the contents of the memory in an extremely fast manner.

The IS46TR16128BL-125KBLA2 memory device is an excellent choice for a wide range of applications requiring reliable, low-power and high-data security. With its wide temperature range, support for dual voltage, fast reading and writing speeds, and 8K x 16 architecture, it provides a powerful and cost-effective solution for a variety of applications.

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