IS46TR16640A-125JBLA1

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Memory is a necessary component of the computer system and plays an important role in the functioning of the computer. The IS46TR16640A-125JBLA1 is an integrated nonvolatile memory device, designed for use in a wide variety of applications including flash memory, server, automotive and consumer electronics. This device offers high performance, low power consumption and a wide operating temperature range.

The IS46TR16640A-125JBLA1 is a nonvolatile memory device, meaning that data stored in the device is retained even if the power is removed. This feature makes it ideal for use in applications where data needs to be kept safe and secure, such as servers or automotive electronics. The device is also resistant to wear, has a long storage life and can be used in harsh environments.

The IS46TR16640A-125JBLA1 is based on the 3D NAND flash architecture and employs advanced process technology to deliver superior performance and endurance. The device features an advanced error correction mechanism that can detect and correct errors in the data. In addition, the device is designed to operate at low power, ensuring that the device does not draw too much power and save on energy costs.

The working principle of the IS46TR16640A-125JBLA1 is based on the principles of NAND flash memory. NAND flash memory is build from metal oxide semiconductor cells that are connected together to form a grid. The cells can be either programmed or erased. When the cells are switched on, charges can be stored in the cells, and when the cells are off, the charges can be released.

When data is written to the device, it is stored in cells that are connected to the grid. To erase data from the device, the cells must be switched off, so that the charges can be released and the data erased. The device features an advanced error correction mechanism that allows it to detect and correct errors in the data.

The IS46TR16640A-125JBLA1 is ideal for a wide variety of applications, such as flash memory, server, automotive, and consumer electronics. Its combination of high performance, low power consumption, and wide operating temperature range make it suitable for a variety of applications. In addition, the device’s advanced error correction mechanism and its ability to operate in a harsh environment make it a reliable and durable memory device.

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