IS49NLC36800-33BLI Allicdata Electronics
Allicdata Part #:

IS49NLC36800-33BLI-ND

Manufacturer Part#:

IS49NLC36800-33BLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 288M PARALLEL 144FCBGA
More Detail: DRAM Memory IC 288Mb (8M x 36) Parallel 300MHz 20n...
DataSheet: IS49NLC36800-33BLI datasheetIS49NLC36800-33BLI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 288Mb (8M x 36)
Clock Frequency: 300MHz
Write Cycle Time - Word, Page: --
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-FCBGA (11x18.5)
Description

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IS49NLC36800-33BLI is a type of memory typically used in applications such as gaming consoles, industrial automation systems and medical imaging systems. It is a dynamic random access memory (DRAM) with a capacity of approximately 400 Megabytes (MB). The IS49NLC36800-33BLI is organised in an array of addressable memory cells, each storing a single bit of data (0 or 1). Access to these cells is controlled using a row and column addressing system.

The working principle of the IS49NLC36800-33BLI is based on the basic principle of capacitance storage. A capacitor stores a certain amount of charge and can be maintained for a certain period of time. The memory cells in the IS49NLC36800-33BLI are organised in pairs, called ‘words’, each consisting of one row and one column. Each row consists of a group of capacitors, each storing one bit of data. When an address is entered, the row and column associated with the address is activated, allowing the data stored in the memory cell to be read.

Reading and writing memory is accomplished using three main operations, namely ‘fetch’, ‘write’ and ‘refresh’. ‘Fetch’ is the process of reading memory cells and storing their information in an internal cache. ‘Write’ is the process of writing data back to the memory cell. Finally, ‘refresh’ is the process of maintaining the charge stored in each memory cell, required due to the leaky nature of integrated circuit capacitors.

The IS49NLC36800-33BLI is a type of synchronous DRAM (SDRAM) designed for high speed operation. It operates at speeds of up to 133MHz and is capable of transferring large amounts of data quickly. The IS49NLC36800-33BLI is typically used in applications where high speed and large capacity are required, such as gaming consoles and industrial automation systems.

The IS49NLC36800-33BLI is a reliable but expensive memory type suitable for high-end applications. It is a good choice for applications requiring high speed, large capacity and low power consumption, such as medical imaging systems. The IS49NLC36800-33BLI is also widely used in networking and communication applications.

The specific data is subject to PDF, and the above content is for reference

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