IS49RL36160-093EBL

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a vital component of an electronic system when it comes to storing and retrieving data. The IS49RL36160-093EBL is a dynamic random access memory (DRAM)-based device, providing a high-density, high-speed memory solution for system designers. It is used for functions such as data caching and buffering, which help make efficient use of resources and optimize system performance.

The IS49RL36160-093EBL is a 4Mb DRAM that is designed to work in a variety of applications including consumer electronics, automotive, embedded systems, and other high-speed memory applications. The device is powered by a 3.3V supply voltage, which allows it to operate at speeds up to 166MHz in order to match the needs of high-performance devices.

The main advantages that the IS49RL36160-093EBL brings are high-speed operation and low-power consumption. In addition to its high performance, the device features a Low-Power SRAM-style interface, which allows designers to use the same device for both high-speed and low-power operations. With its 4Mb of storage, the device is capable of handling large volumes of data in parallel applications, and its ECC On-Die feature helps detect and correct errors for increased data reliability.

The IS49RL36160-093EBL is a synchronous DRAM and consists of nine components, including the DRAM core, circuits for power-on reset, address/data buses, and a clock input. In order to make reading and writing data to the device easier, it contains a burst mode that allow data to be read in consecutive 16-bit bursts. Data is written to the device in the same manner, with the data being written in 8-bit words.

The core of the IS49RL36160-093EBL is a 4Mb array of two kilobyte pages, each of which can be configured as either a 256-byte page or a 512-byte page. This allows the device to store up to 1 megabyte of data. Data can be stored in either byte-wide or word-wide configurations, allowing for efficient operations. When using the word-wide mode, the data is stored in multiple 16-bit words, which can be transferred simultaneously for increased performance.

The IS49RL36160-093EBL also features an advanced Single Cycle DRAM Controller. This controller simplifies the interaction with the DRAM, allowing designers to program the device as they see fit. In addition, the controller helps reduce power consumption by allowing data to be transferred in burst mode with a single cycle transfer.

The IS49RL36160-093EBL is an ideal solution for many high-performance applications, due to its high-speed operation, low-power consumption, and flexibility. Its high density and low-power operation make it a great choice for memory-intensive applications, such as data caching, buffering, and other applications that require a rapid response time. Furthermore, its ECC on-die feature provides greater reliability and error correction, allowing the device to be used in mission-critical applications.

The specific data is subject to PDF, and the above content is for reference