IS62WV12816BLL-55BLI-TR

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The IS62WV12816BLL-55BLI-TR is a form of non-volatile static random access memory (SRAM) along with an internal gain cell greatly enhances the memory performance. The device features wear-leveling algorithms which is used to ensure an even wear of the of the device over time and 15 years data retention capability. This can be used in the a variety of applications.

Applications

The IS62WV12816BLL-55BLI-TR has a wide range of applications; therefore it can be used in many demanding applications. It can be used for industrial automation, automotive, communications equipment, photovoltaic control, security and many more.

Working Principle

The device has a non-volatile memory, which means it does not require a power source to maintain its data storage. This makes it safe to use in a variety of applications. The internal gain cell enhances the memory performance and the on board wear-leveling algorithms ensures an even wear of the device over time. The device maintains a 15-year data retention capability.

IS62WV12816BLL-55BLI-TR operates on a three-stage, write cycle and a two-stage read cycle. When the write cycle is initiated, the data is written to the device in three steps; first it is written to the internal buffer, which then can be committed to the sectors, and finally verified on the device. This allows for a reliable, fast and efficient writing to the device.

In the read cycle, the device first reads from the internal buffer and then from the internal gain cell. The gain cell amplifies the stored data, allowing for a faster and more reliable read.

The IS62WV12816BLL-55BLI-TR is a reliable and fast storage that can be used in many demanding applications. The non-volatile nature and wear-leveling algorithms ensures data retention and reliability in the most extreme conditions. The read cycle enables for fast and reliable data transfer, which is essential for many applications.

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