Allicdata Part #: | ISL9V3036P3-ND |
Manufacturer Part#: |
ISL9V3036P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 360V 21A 150W TO220AB |
More Detail: | IGBT 360V 21A 150W Through Hole TO-220AB |
DataSheet: | ISL9V3036P3 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | 0.00000 |
Series: | EcoSPARK® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 360V |
Current - Collector (Ic) (Max): | 21A |
Vce(on) (Max) @ Vge, Ic: | 1.6V @ 4V, 6A |
Power - Max: | 150W |
Switching Energy: | -- |
Input Type: | Logic |
Gate Charge: | 17nC |
Td (on/off) @ 25°C: | -/4.8µs |
Test Condition: | 300V, 1 kOhm, 5V |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Base Part Number: | ISL9V3036 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The ISL9V3036P3 is a single IGBT in the transistors category. Its application field and working principle can be useful for anyone looking for a robust, reliable switching device. IGBT stands for “insulated-gate bipolar transistor”, which has both a low-voltage and high-current switching capability. It is a power transistor, meaning it can provide excellent performance in high-speed circuits, where other types of transistors cannot. The IGBT is characterized by the ability to switch between conductive and non-conductive states in a very short period of time.
The application field of the ISL9V3036P3 is generally used in clean power control and energy conversion applications as it provides high-frequency operation. It is ideal for applications such as motor control, power supply and inverter control, photovoltaic systems, motor drives, battery management, solar inverters and various automotive applications. Furthermore, its low-power capabilities make it suitable for space-sensitive applications, such as energy-saving lighting, ventilators, household appliances and small commercial equipment.
The ISL9V3036P3 has an improved working principle. As an IGBT, it is based on the integration of two devices together; namely, an N-channel MOSFET and a P-channel MOSFET. This powerful combination carries both high-speed switching capabilities and very low losses during switching, making it ideal for high-speed circuits. It combines the advantages of MOSFETs and bipolar transistors and thus eliminating their respective shortcomings, such as the high-voltage drive of the latter and the high current of the former.
The ISL9V3036P3 operates via a single gate control signal: the gate voltage is the sole factor that determines whether the circuit will conduct or not conduct. A low gate-voltage will turn off the IGBT and a high gate-voltage will turn it on. Furthermore, it has a low gate-charge and fast switching operation, making it an ideal choice for switching between high- and low-frequency operations.
The ISL9V3036P3 has a good thermal stability and operates with a low capacitance, making it ideal for low-power applications. Its current ratings are higher than other types of transistors, enabling it to have high noise immunity and good robustness. Finally, its very low on-state saturation voltage promotes less losses, thus leading to improved efficiency.
In conclusion, the ISL9V3036P3 is an efficient, robust and reliable single IGBT of the Transistor category. Its application field and working principle make it an ideal choice for various applications such as motor control, power supply and inverter control, photovoltaic systems, motor drives, energy-saving lighting and household appliances, due to its low-voltage and high-current switching capabilities, as well as its low gate-charge, fast switching operations, and low on-state saturation voltage.
The specific data is subject to PDF, and the above content is for reference
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