ISL9V3040P3 Allicdata Electronics
Allicdata Part #:

ISL9V3040P3-ND

Manufacturer Part#:

ISL9V3040P3

Price: $ 1.52
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 430V 21A 150W TO220AB
More Detail: IGBT 430V 21A 150W Through Hole TO-220AB
DataSheet: ISL9V3040P3 datasheetISL9V3040P3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 1.52000
10 +: $ 1.47440
100 +: $ 1.44400
1000 +: $ 1.41360
10000 +: $ 1.36800
Stock 1000Can Ship Immediately
$ 1.52
Specifications
Switching Energy: --
Base Part Number: ISL9V3040
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Test Condition: 300V, 1 kOhm, 5V
Td (on/off) @ 25°C: -/4.8µs
Gate Charge: 17nC
Input Type: Logic
Series: EcoSPARK®
Power - Max: 150W
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Current - Collector (Ic) (Max): 21A
Voltage - Collector Emitter Breakdown (Max): 430V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The ISL9V3040P3 is a single IGBT transistor that has a great range of both applications and working principles. It is designed to provide a wide range of operation and versatility in applications that include power and high-speed products, such as power tools, cooling and heating systems, pumps, and more.

The ISL9V3040P3 offers high current capacity, dynamic and static dV/dt capability, and an outstanding thermal performance. It features a 900V blocking voltage, 4A of continuous current, and a maximum switching frequency of 500kHz. It also features low gate charge, internal current sensing, and a variety of packages including the IPW-7 and IPA-7 models. The package size is 3.6mm x 6mm with a 5.08mm pitch.

The ISL9V3040P3 is designed to operate in PWM and HDM modes. In PWM mode, the transistor is capable of providing a uniform frequency, current, and voltage that ensures efficient operation. In HDM mode, the transistor works by providing a pulse width modulation of power that allows for extremely fast switching between high and low voltage. This mode is particularly well-suited for systems that require high levels of power over short periods of time.

The ISL9V3040P3\'s working principle is based on a process known as Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) technology. This technology utilizes an electromechanical field to enable the transfer of electrons from one side of the circuit to the other. This is achieved by two regions that are separated by a thin dielectric material. The first region, or the drain region, contains majority charge carriers to turn the device on, while the second region, or the source region, contains minority charge carriers to turn the device off. This process allows the ISL9V3040P3 to efficiently switch between high and low voltages.

The ISL9V3040P3\'s wide range of applications and robust operating principles make it an ideal choice for many power management applications. Its ability to operate in PWM and HDM modes enable it to be used for a number of different types of systems, from power tools to cooling and heating systems. The transistor can also run at high switching frequencies and offers a wide range of current and voltage capabilities, making it suitable for a number of different applications. With its outstanding thermal performance and robust construction, the ISL9V3040P3 is a great choice for any power management application.

The specific data is subject to PDF, and the above content is for reference

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