Allicdata Part #: | IXA37IF1200HJ-ND |
Manufacturer Part#: |
IXA37IF1200HJ |
Price: | $ 6.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1200V 58A 195W TO247 |
More Detail: | IGBT PT 1200V 58A 195W Through Hole ISOPLUS247™ |
DataSheet: | IXA37IF1200HJ Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
30 +: | $ 6.02091 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 58A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 35A |
Power - Max: | 195W |
Switching Energy: | 3.8mJ (on), 4.1mJ (off) |
Input Type: | Standard |
Gate Charge: | 106nC |
Td (on/off) @ 25°C: | -- |
Test Condition: | 600V, 35A, 27 Ohm, 15V |
Reverse Recovery Time (trr): | 350ns |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | ISOPLUS247™ |
Supplier Device Package: | ISOPLUS247™ |
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Modern IGBTs, such as IXA37IF1200HJ are a type of transistor known as an insulated-gate bipolar transistor. This type of transistor is a combination of both MOSFET and BJT transistors, and has properties intermediate between the two. The IXA37IF1200HJ is a single IGBT, which features a voltage rating of 600 V, an on-state current of 37 A and an on-state voltage drop of 2 V. It is also able to handle up to 1200 W of continuous power, making it ideal for use in applications where high power is required.The primary advantage of IGBTs compared to traditional MOSFET and BJT transistors is their ability to switch on and off extremely quickly. This makes them highly suitable for applications requiring fast switching times, such as motor control and power conversion. The IXA37IF1200HJ is a particularly robust IGBT, which can withstand up to 150A of pulsed current for short periods of time.The working principle of an IGBT is similar to that of a MOSFET and BJT transistor, but with some key differences. In an IGBT, the transistor consists of two distinct parts: the insulated gate and the bipolar junction. The insulated gate is responsible for controlling the flow of current, while the bipolar junction controls the voltage.When the voltage on the insulated gate is increased, it will cause the electrons to flow from the negative to the positive side, allowing current to flow.When the voltage on the insulated gate is decreased or the gate current is zero, then the flow of electrons will be blocked, preventing current from flowing. This is what makes the IGBT so efficient, as it can switch on and off so quickly.The IXA37IF1200HJ is a particularly well-suited IGBT for applications that require high power and rapid switching speed. Its high voltage rating and fast switching time make it ideal for applications such as motor control and power conversion, as it can reliably handle large currents and quickly switch on and off.In conclusion, the IXA37IF1200HJ is an excellent choice for applications that require high power and fast switching speed. Its high voltage rating and fast switching time make it a reliable and efficient choice for applications such as motor control and power conversion.
The specific data is subject to PDF, and the above content is for reference
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